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Fabrication of Tungsten Oxide Thin F...

Momanyi, Geoffrey.

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Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method./
Author:	Momanyi, Geoffrey.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2023,
Description:	83 p.
Notes:	Source: Masters Abstracts International, Volume: 84-11.
Contained By:	Masters Abstracts International84-11.
Subject:	Nanotechnology. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30540615
ISBN:	9798379521820

Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method.
Momanyi, Geoffrey.

Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method. - Ann Arbor : ProQuest Dissertations & Theses, 2023 - 83 p.

Source: Masters Abstracts International, Volume: 84-11.

Thesis (M.S.)--Youngstown State University, 2023.

Metal oxide semiconductor materials such as tungsten oxide are promising candidates for use as photoanodes in solar water splitting. Tungsten oxide is an n-type semiconductor that was prepared on stainless steel 304 substrate and subsequently studied for water-splitting applications. This study investigated the effect of the annealing temperature and substrate cleaning reagents on the photoelectrochemical (PEC) properties of tungsten oxide thin films. The main method of synthesis employed was the sol-gel method. Tungsten oxide thin films were deposited from a precursor solution of peroxotungstic acid by doctor blading. The as-deposited amorphous WO3 films were further subjected to heat treatment at various annealing temperatures (200 {phono}{mllhring}C, 300 {phono}{mllhring}C, 400 {phono}{mllhring}C, and 500 {phono}{mllhring}C) to transform the amorphous material into polycrystalline WO3 nanostructures. Surface morphology, the crystallinity of the film, the thickness of the film, and photoelectrochemical properties were investigated using scanning electron microscopy, (SEM), X-ray diffractometry (XRD), stylus profilometry, cyclic voltammetry (CV), and linear sweep voltammetry (LSV). The optimal WO3 film, at a thickness of 5 {phono}{aelig}m and annealed at 400 {phono}{mllhring}C, achieved a photocurrent density of 98.0 {phono}{aelig}A/cm2 at an applied voltage of 0.53 V vs Ag/AgCl. It is essential to treat the substrate with HNO3 to passivate the surface of the stainless-steel substrate with the Cr2O3{A0}layer.

ISBN: 9798379521820Subjects--Topical Terms:

526235
Nanotechnology.
Subjects--Index Terms:

Tungsten oxide

Fabrication of Tungsten Oxide Thin Film on Stainless Steel by Sol-Gel Method.
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520 $a Metal oxide semiconductor materials such as tungsten oxide are promising candidates for use as photoanodes in solar water splitting. Tungsten oxide is an n-type semiconductor that was prepared on stainless steel 304 substrate and subsequently studied for water-splitting applications. This study investigated the effect of the annealing temperature and substrate cleaning reagents on the photoelectrochemical (PEC) properties of tungsten oxide thin films. The main method of synthesis employed was the sol-gel method. Tungsten oxide thin films were deposited from a precursor solution of peroxotungstic acid by doctor blading. The as-deposited amorphous WO3 films were further subjected to heat treatment at various annealing temperatures (200 {phono}{mllhring}C, 300 {phono}{mllhring}C, 400 {phono}{mllhring}C, and 500 {phono}{mllhring}C) to transform the amorphous material into polycrystalline WO3 nanostructures. Surface morphology, the crystallinity of the film, the thickness of the film, and photoelectrochemical properties were investigated using scanning electron microscopy, (SEM), X-ray diffractometry (XRD), stylus profilometry, cyclic voltammetry (CV), and linear sweep voltammetry (LSV). The optimal WO3 film, at a thickness of 5 {phono}{aelig}m and annealed at 400 {phono}{mllhring}C, achieved a photocurrent density of 98.0 {phono}{aelig}A/cm2 at an applied voltage of 0.53 V vs Ag/AgCl. It is essential to treat the substrate with HNO3 to passivate the surface of the stainless-steel substrate with the Cr2O3{A0}layer.
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