東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Lateral Programmable Metallization C...

Chamele, Ninad,

FindBook

Google Book

Amazon

博客來

Lateral Programmable Metallization Cells: Materials, Devices and Mechanisms /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Lateral Programmable Metallization Cells: Materials, Devices and Mechanisms // Ninad Chamele.
作者:	Chamele, Ninad,
面頁冊數:	1 electronic resource (168 pages)
附註:	Source: Dissertations Abstracts International, Volume: 82-07, Section: B.
Contained By:	Dissertations Abstracts International82-07B.
標題:	Electrical engineering. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28255768
ISBN:	9798557030366

Lateral Programmable Metallization Cells: Materials, Devices and Mechanisms /
Chamele, Ninad,

Lateral Programmable Metallization Cells: Materials, Devices and Mechanisms /Ninad Chamele. - 1 electronic resource (168 pages)

Source: Dissertations Abstracts International, Volume: 82-07, Section: B.

Lateral programmable metallization cells (PMC) utilize the properties of electrodeposits grown over a solid electrolyte channel. Such devices have an active anode and an inert cathode separated by a long electrodeposit channel in a coplanar arrangement. The ability to transport large amount of metallic mass across the channel makes these devices attractive for various More-Than-Moore applications. Existing literature lacks a comprehensive study of electrodeposit growth kinetics in lateral PMCs. Moreover, the morphology of electrodeposit growth in larger, planar devices is also not understood. Despite the variety of applications, lateral PMCs are not embraced by the semiconductor industry due to incompatible materials and high operating voltages needed for such devices. In this work, a numerical model based on the basic processes in PMCs - cation drift and redox reactions - is proposed, and the effect of various materials parameters on the electrodeposit growth kinetics is reported. The morphology of the electrodeposit growth and kinetics of the electrodeposition process are also studied in devices based on Ag-Ge30Se70 materials system. It was observed that the electrodeposition process mainly consists of two regimes of growth - cation drift limited regime and mixed regime. The electrodeposition starts in cation drift limited regime at low electric fields and transitions into mixed regime as the field increases. The onset of mixed regime can be controlled by applied voltage which also affects the morphology of electrodeposit growth. The numerical model was then used to successfully predict the device kinetics and onset of mixed regime. The problem of materials incompatibility with semiconductor manufacturing was solved by proposing a novel device structure. A bilayer structure using semiconductor foundry friendly materials was suggested as a candidate for solid electrolyte. The bilayer structure consists of a low resistivity oxide shunt layer on top of a high resistivity ion carrying oxide layer. Devices using Cu2O as the low resistivity shunt on top of Cu doped WO3 oxide were fabricated. The bilayer devices provided orders of magnitude improvement in device performance in the context of operating voltage and switching time. Electrical and materials characterization revealed the structure of bilayers and the mechanism of electrodeposition in these devices.

English

ISBN: 9798557030366Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Chalcogenide

Lateral Programmable Metallization Cells: Materials, Devices and Mechanisms /
LDR:03892nmm a22004573i 4500 001 2401694
005 20250522102050.5
006 m o d
007 cr|nu||||||||
008 251215s2020 miu||||||m |||||||eng d
020 $a 9798557030366
035 $a (MiAaPQD)AAI28255768
035 $a AAI28255768
035 $a 2401694
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Chamele, Ninad, $e author. $3 3771819
245 1 0 $a Lateral Programmable Metallization Cells: Materials, Devices and Mechanisms / $c Ninad Chamele.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2020
300 $a 1 electronic resource (168 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 82-07, Section: B.
500 $a Advisors: Kozicki, Michael Committee members: Barnaby, Hugh; Newman, Nathan; Gonzalez-Velo, Yago.
502 $b Ph.D. $c Arizona State University $d 2020.
520 $a Lateral programmable metallization cells (PMC) utilize the properties of electrodeposits grown over a solid electrolyte channel. Such devices have an active anode and an inert cathode separated by a long electrodeposit channel in a coplanar arrangement. The ability to transport large amount of metallic mass across the channel makes these devices attractive for various More-Than-Moore applications. Existing literature lacks a comprehensive study of electrodeposit growth kinetics in lateral PMCs. Moreover, the morphology of electrodeposit growth in larger, planar devices is also not understood. Despite the variety of applications, lateral PMCs are not embraced by the semiconductor industry due to incompatible materials and high operating voltages needed for such devices. In this work, a numerical model based on the basic processes in PMCs - cation drift and redox reactions - is proposed, and the effect of various materials parameters on the electrodeposit growth kinetics is reported. The morphology of the electrodeposit growth and kinetics of the electrodeposition process are also studied in devices based on Ag-Ge30Se70 materials system. It was observed that the electrodeposition process mainly consists of two regimes of growth - cation drift limited regime and mixed regime. The electrodeposition starts in cation drift limited regime at low electric fields and transitions into mixed regime as the field increases. The onset of mixed regime can be controlled by applied voltage which also affects the morphology of electrodeposit growth. The numerical model was then used to successfully predict the device kinetics and onset of mixed regime. The problem of materials incompatibility with semiconductor manufacturing was solved by proposing a novel device structure. A bilayer structure using semiconductor foundry friendly materials was suggested as a candidate for solid electrolyte. The bilayer structure consists of a low resistivity oxide shunt layer on top of a high resistivity ion carrying oxide layer. Devices using Cu2O as the low resistivity shunt on top of Cu doped WO3 oxide were fabricated. The bilayer devices provided orders of magnitude improvement in device performance in the context of operating voltage and switching time. Electrical and materials characterization revealed the structure of bilayers and the mechanism of electrodeposition in these devices.
546 $a English
590 $a School code: 0010
650 4 $a Electrical engineering. $3 649834
650 4 $a Condensed matter physics. $3 3173567
650 4 $a Materials science. $3 543314
653 $a Chalcogenide
653 $a Electrodeposition
653 $a Nonvolatile
653 $a Oxide
653 $a Programmable metallization cell
653 $a Switching
690 $a 0544
690 $a 0794
690 $a 0611
710 2 $a Arizona State University. $b Electrical Engineering. $e degree granting institution. $3 3771820
720 1 $a Kozicki, Michael $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 82-07B.
790 $a 0010
791 $a Ph.D.
792 $a 2020
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28255768