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Scaling and Design of Thin Film Ferr...

Walters, Glen Harris.

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Scaling and Design of Thin Film Ferroelectric Hafnium Oxide for Memory and Logic Devices.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Scaling and Design of Thin Film Ferroelectric Hafnium Oxide for Memory and Logic Devices./
作者:	Walters, Glen Harris.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
面頁冊數:	171 p.
附註:	Source: Dissertations Abstracts International, Volume: 82-06, Section: B.
Contained By:	Dissertations Abstracts International82-06B.
標題:	Electrical engineering. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27831658
ISBN:	9798698594918

Scaling and Design of Thin Film Ferroelectric Hafnium Oxide for Memory and Logic Devices.
Walters, Glen Harris.

Scaling and Design of Thin Film Ferroelectric Hafnium Oxide for Memory and Logic Devices. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 171 p.

Source: Dissertations Abstracts International, Volume: 82-06, Section: B.

Thesis (Ph.D.)--University of Florida, 2020.

The recent discovery of ferroelectricity in thin film hafnium oxide has enabled a new field of low power, nonvolatile, and CMOS compatible memory and logic technologies. Ultra-thin hafnium oxide based ferroelectric random access memory (FRAM), ferroelectric tunnel junctions (FTJs), ferroelectric field effect transistors (FeFETS), and ferroelectric based transducers have the potential to advance beyond the current technology limitations. This work examines ferroelectricity in doped and un-doped hafnium oxide as a function of the film thickness, substrate, electrodes, deposition method, and film layering with careful consideration given to device integration and device applications. Methods are presented which aid in determining the window of ferroelectric operation for hafnium oxide thin films. A novel plasma based deposition technique is introduced which enhances the ferroelectric polarization of the hafnium oxide films compared to other deposition methods. Various devices structures are explored to optimize ferroelectric or leakage current performance. Multi-layer ferroelectric tunnel junction device architectures are examined which overcome the signal margin limiting leakage current issues encountered in single layer hafnium oxide FTJ devices. Reliability issues such as thermal depolarization, imprint, and cycling lifetime are also explored. Ferroelectric transducers are demonstrated for the first time utilizing thin film hafnium oxide.

ISBN: 9798698594918Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

ALD

Scaling and Design of Thin Film Ferroelectric Hafnium Oxide for Memory and Logic Devices.
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300 $a 171 p.
500 $a Source: Dissertations Abstracts International, Volume: 82-06, Section: B.
500 $a Advisor: Nishida, Toshikazu.
502 $a Thesis (Ph.D.)--University of Florida, 2020.
520 $a The recent discovery of ferroelectricity in thin film hafnium oxide has enabled a new field of low power, nonvolatile, and CMOS compatible memory and logic technologies. Ultra-thin hafnium oxide based ferroelectric random access memory (FRAM), ferroelectric tunnel junctions (FTJs), ferroelectric field effect transistors (FeFETS), and ferroelectric based transducers have the potential to advance beyond the current technology limitations. This work examines ferroelectricity in doped and un-doped hafnium oxide as a function of the film thickness, substrate, electrodes, deposition method, and film layering with careful consideration given to device integration and device applications. Methods are presented which aid in determining the window of ferroelectric operation for hafnium oxide thin films. A novel plasma based deposition technique is introduced which enhances the ferroelectric polarization of the hafnium oxide films compared to other deposition methods. Various devices structures are explored to optimize ferroelectric or leakage current performance. Multi-layer ferroelectric tunnel junction device architectures are examined which overcome the signal margin limiting leakage current issues encountered in single layer hafnium oxide FTJ devices. Reliability issues such as thermal depolarization, imprint, and cycling lifetime are also explored. Ferroelectric transducers are demonstrated for the first time utilizing thin film hafnium oxide.
590 $a School code: 0070.
650 4 $a Electrical engineering. $3 649834
650 4 $a Ferroelectrics. $3 3681651
650 4 $a CMOS. $3 3681646
650 4 $a Semiconductors. $3 516162
650 4 $a Thin films. $3 626403
653 $a ALD
653 $a Ferroelectric
653 $a Hafnium oxide
653 $a Thin film
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710 2 $a University of Florida. $b Electrical and Computer Engineering. $3 3429026
773 0 $t Dissertations Abstracts International $g 82-06B.
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