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Current-Induced Dynamics of Easy-Pla...

Zhang, Pengxiang.

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Current-Induced Dynamics of Easy-Plane Antiferromagnets.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Current-Induced Dynamics of Easy-Plane Antiferromagnets./
作者:	Zhang, Pengxiang.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2023,
面頁冊數:	216 p.
附註:	Source: Dissertations Abstracts International, Volume: 85-02, Section: B.
Contained By:	Dissertations Abstracts International85-02B.
標題:	Crystal structure. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30672339
ISBN:	9798380097444

Current-Induced Dynamics of Easy-Plane Antiferromagnets.
Zhang, Pengxiang.

Current-Induced Dynamics of Easy-Plane Antiferromagnets. - Ann Arbor : ProQuest Dissertations & Theses, 2023 - 216 p.

Source: Dissertations Abstracts International, Volume: 85-02, Section: B.

Thesis (Ph.D.)--Massachusetts Institute of Technology, 2023.

Antiferromagnetic memory devices are expected to be very fast, stable, dense and energy-efficient, making them promising for the next generation non-volatile random-access memory. However, in antiferromagnets, it used to be challenging to accurately understand the current-induced dynamics, especially the spin-orbit-torque switching dynamics. To realize a practical antiferromagnetic memory device, we must overcome the challenge.In this PhD Thesis, I discussed about the systematic and quantitative study of a model material, collinear easy-plane antiferromagnetic insulator α-Fe2O3 covered by Pt, for non-spin-orbit-torque switching mechanisms, magnon spin transport, and finally, the long-anticipated damping-like-torque switching, and the method to quantitatively characterize the spin-orbit torques. And I also discussed about the study about the damping-like-torque switching of a non-collinear easy-plane antiferromagnetic metal Mn3Sn, and the handedness anomaly of the switching direction.These studies deepen the scientific understandings of spin-orbit torque dynamics in antiferromagnets, and pave the way to real-life applications of antiferromagnetic memory devices.

ISBN: 9798380097444Subjects--Topical Terms:

3561040
Crystal structure.

Current-Induced Dynamics of Easy-Plane Antiferromagnets.
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500 $a Source: Dissertations Abstracts International, Volume: 85-02, Section: B.
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520 $a Antiferromagnetic memory devices are expected to be very fast, stable, dense and energy-efficient, making them promising for the next generation non-volatile random-access memory. However, in antiferromagnets, it used to be challenging to accurately understand the current-induced dynamics, especially the spin-orbit-torque switching dynamics. To realize a practical antiferromagnetic memory device, we must overcome the challenge.In this PhD Thesis, I discussed about the systematic and quantitative study of a model material, collinear easy-plane antiferromagnetic insulator α-Fe2O3 covered by Pt, for non-spin-orbit-torque switching mechanisms, magnon spin transport, and finally, the long-anticipated damping-like-torque switching, and the method to quantitatively characterize the spin-orbit torques. And I also discussed about the study about the damping-like-torque switching of a non-collinear easy-plane antiferromagnetic metal Mn3Sn, and the handedness anomaly of the switching direction.These studies deepen the scientific understandings of spin-orbit torque dynamics in antiferromagnets, and pave the way to real-life applications of antiferromagnetic memory devices.
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650 4 $a Electromagnetism. $3 522050
650 4 $a Temperature. $3 711968
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