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Structure, Mechanism, and Electronic...

Naab, Benjamin D.

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Structure, Mechanism, and Electronic Properties of Organic Molecular n-Dopants and n-Doped Materials.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Structure, Mechanism, and Electronic Properties of Organic Molecular n-Dopants and n-Doped Materials./
作者:	Naab, Benjamin D.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2015,
面頁冊數:	270 p.
附註:	Source: Dissertations Abstracts International, Volume: 82-10, Section: B.
Contained By:	Dissertations Abstracts International82-10B.
標題:	Materials science. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28120315
ISBN:	9798698514480

Structure, Mechanism, and Electronic Properties of Organic Molecular n-Dopants and n-Doped Materials.
Naab, Benjamin D.

Structure, Mechanism, and Electronic Properties of Organic Molecular n-Dopants and n-Doped Materials. - Ann Arbor : ProQuest Dissertations & Theses, 2015 - 270 p.

Source: Dissertations Abstracts International, Volume: 82-10, Section: B.

Thesis (Ph.D.)--Stanford University, 2015.

The low ionization potentials of highly reducing organic n-dopants and host radical anions makes n-doping a much greater challenge than p-doping. However, many modern electronics such as transistors, complementary circuits, light-emitting diodes, photovoltaics, and thermoelectrics either require or benefit from both n- and p-type conduction. It is a long-standing and partially realized goal of the organic electronics community to mass produce devices by exploiting modern printing processes. To accomplish this will require new materials, device architectures, and processing methods. The goal of this thesis was to advance the state of solution-processable conductive n-type organic materials for use in printed organic solar cells, transistors, and thermoelectric devices. In this thesis, a bottom-up mechanistic approach was used to design new organic n-dopants and n-dopable host semiconductors. First, the n-doping mechanism of 1,3-dimethylbenzimidazole (DMBI) derived dopants was studied in solution, and it was discovered that DMBI dopants react with fullerenes by hydride transfer. Following this study, a new class of dimeric dopants ((DMBI)2) were developed to eliminate the dependence of the doping reaction on the hydrogenation thermodynamics of the host. The (DMBI)2 dopants were employed in a thorough synthetic, spectroscopic, and electrical study of new n-dopable conjugated polymers. Ultimately, several polymers with higher conductivities when n-doped than current state-of-the-art materials were identified. The results of this study indicate that the polaron delocalization length is the most relevant parameter to optimize to achieve high conductivity n-doped polymer films. Building upon this work, a class of self-n-doped polymers with remarkable stability in air were developed. Finally, as a demonstration of the utility of the new materials reported in this thesis, fully solution-processed logic gates and organic solar cells with n-doped layers were fabricated.

ISBN: 9798698514480Subjects--Topical Terms:

543314
Materials science.
Subjects--Index Terms:

Low ionization potentials

Structure, Mechanism, and Electronic Properties of Organic Molecular n-Dopants and n-Doped Materials.
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