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Growth and Characterization of Boron Nitride Thin Films and Nanostructures Using Atomic Layer Deposition = = Bor Nitrur Ince Filmlerin ve Nanoyapilarin Atomik Katman Biriktirme Yontemi Ile Buyutulmesi ve Karakterizasyonu.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Growth and Characterization of Boron Nitride Thin Films and Nanostructures Using Atomic Layer Deposition =/
其他題名:	Bor Nitrur Ince Filmlerin ve Nanoyapilarin Atomik Katman Biriktirme Yontemi Ile Buyutulmesi ve Karakterizasyonu.
作者:	Haider, Ali.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2014,
面頁冊數:	87 p.
附註:	Source: Masters Abstracts International, Volume: 83-10.
Contained By:	Masters Abstracts International83-10.
標題:	Names. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29047321
ISBN:	9798209965923

Growth and Characterization of Boron Nitride Thin Films and Nanostructures Using Atomic Layer Deposition = = Bor Nitrur Ince Filmlerin ve Nanoyapilarin Atomik Katman Biriktirme Yontemi Ile Buyutulmesi ve Karakterizasyonu.
Haider, Ali.

Growth and Characterization of Boron Nitride Thin Films and Nanostructures Using Atomic Layer Deposition =Bor Nitrur Ince Filmlerin ve Nanoyapilarin Atomik Katman Biriktirme Yontemi Ile Buyutulmesi ve Karakterizasyonu. - Ann Arbor : ProQuest Dissertations & Theses, 2014 - 87 p.

Source: Masters Abstracts International, Volume: 83-10.

Thesis (M.Sc.)--Bilkent Universitesi (Turkey), 2014.

Being a member of III-nitride family, boron nitride (BN) and its nanostructures have recently attracted a lot of attention, mainly due to their distinctive and superior material properties, including wide band gap, high-temperature stability, high oxidation and corrosion resistance, as well as high thermal conductivity. This versatile material has found applications in UV emission, lubrication, composite reinforcement, gas adsorption, cosmetics, and thermal management. For modern electronic applications, it is imperative to obtain high quality BN films on large area substrates with a controlled thickness in order to fulfill the entire spectrum of hBN applications. Also, a facile method such as atomic layer deposition (ALD) using non halide precursors is necessary to obtain BN films at low temperatures compliant with the standards in terms of having nontoxic byproducts. ALD is a special case of chemical vapor deposition (CVD), in which two or more precursors are sequentially exposed to substrate surface separated by purging periods. In comparison with other thin film growth methods, hall mark of ALD is self limiting growth mechanism which enables deposition of highly uniform and conformal thin films with sub-angstrom thickness control. The precise and conformal layer by layer growth of ALD can be exploited to achieve growth of BN hollow nanofibers (HNFs) on high aspect ratio electrospun polymer nanofibrous templates. BN HNFs fabricated by combination of ALD and electrospinning can be utilized to address and solve important constraints associated with previous methods of fabrication such as severe preparation conditions, limited control over morphology, and low purity of the resulting BN HNFs.In this thesis, we report on the controlled deposition of BN films and its nanostructures with the use of a hollow-cathode plasma source integrated (HCPA-ALD) reactor and present detailed materials characterization results of deposited thin films and fabricated nanostructures. Depositions are carried out at low substrate temperatures (less than 450 °C) using sequential injection of nonhalide triethylboron (TEB) and N2/H2 plasma as boron and nitrogen precursors, respectively. The deposition process parameters such as pulse length of TEB and substrate temperature, as well as the influence of post-deposition annealing are studied. Moreover, another nonhalide alternative precursor named tris(dimethyl)amidoboron (TDMAB) was studied for deposition of BN films. Initial experiments were performed using TDMAB and N2/H2 plasma as boron and nitrogen precursor. In addition to BN thin film growth studies, we report on electrospun polymeric nanofibrous template-based fabrication and characterization of AlN/BN bishell HNFs. Synthesized AlN/BN bishell HNFs were found to be polycrystalline with a hexagonal structure along with lowimpurity content.

ISBN: 9798209965923Subjects--Topical Terms:

3680861
Names.

Growth and Characterization of Boron Nitride Thin Films and Nanostructures Using Atomic Layer Deposition = = Bor Nitrur Ince Filmlerin ve Nanoyapilarin Atomik Katman Biriktirme Yontemi Ile Buyutulmesi ve Karakterizasyonu.
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245 1 0 $a Growth and Characterization of Boron Nitride Thin Films and Nanostructures Using Atomic Layer Deposition = $b Bor Nitrur Ince Filmlerin ve Nanoyapilarin Atomik Katman Biriktirme Yontemi Ile Buyutulmesi ve Karakterizasyonu.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2014
300 $a 87 p.
500 $a Source: Masters Abstracts International, Volume: 83-10.
500 $a Advisor: Biyikli, Necmi.
502 $a Thesis (M.Sc.)--Bilkent Universitesi (Turkey), 2014.
520 $a Being a member of III-nitride family, boron nitride (BN) and its nanostructures have recently attracted a lot of attention, mainly due to their distinctive and superior material properties, including wide band gap, high-temperature stability, high oxidation and corrosion resistance, as well as high thermal conductivity. This versatile material has found applications in UV emission, lubrication, composite reinforcement, gas adsorption, cosmetics, and thermal management. For modern electronic applications, it is imperative to obtain high quality BN films on large area substrates with a controlled thickness in order to fulfill the entire spectrum of hBN applications. Also, a facile method such as atomic layer deposition (ALD) using non halide precursors is necessary to obtain BN films at low temperatures compliant with the standards in terms of having nontoxic byproducts. ALD is a special case of chemical vapor deposition (CVD), in which two or more precursors are sequentially exposed to substrate surface separated by purging periods. In comparison with other thin film growth methods, hall mark of ALD is self limiting growth mechanism which enables deposition of highly uniform and conformal thin films with sub-angstrom thickness control. The precise and conformal layer by layer growth of ALD can be exploited to achieve growth of BN hollow nanofibers (HNFs) on high aspect ratio electrospun polymer nanofibrous templates. BN HNFs fabricated by combination of ALD and electrospinning can be utilized to address and solve important constraints associated with previous methods of fabrication such as severe preparation conditions, limited control over morphology, and low purity of the resulting BN HNFs.In this thesis, we report on the controlled deposition of BN films and its nanostructures with the use of a hollow-cathode plasma source integrated (HCPA-ALD) reactor and present detailed materials characterization results of deposited thin films and fabricated nanostructures. Depositions are carried out at low substrate temperatures (less than 450 °C) using sequential injection of nonhalide triethylboron (TEB) and N2/H2 plasma as boron and nitrogen precursors, respectively. The deposition process parameters such as pulse length of TEB and substrate temperature, as well as the influence of post-deposition annealing are studied. Moreover, another nonhalide alternative precursor named tris(dimethyl)amidoboron (TDMAB) was studied for deposition of BN films. Initial experiments were performed using TDMAB and N2/H2 plasma as boron and nitrogen precursor. In addition to BN thin film growth studies, we report on electrospun polymeric nanofibrous template-based fabrication and characterization of AlN/BN bishell HNFs. Synthesized AlN/BN bishell HNFs were found to be polycrystalline with a hexagonal structure along with lowimpurity content.
520 $a III-nitrur ailesinin bir uyesi olarak, bor nitrur (BN) ve nanoyapilari genis bant araligi, yuksek-sicaklik kararliligi, ve yuksek oksitlenme ve korozyon direncinin yanisira yuksek isil iletkenligi de iceren ayirt edici ve ustun malzeme ozellikleri sayesinde yakin zamanda cokca dikkat cekmistir. Bu cok yonlu malzeme UV emisyonu, yaglama, kompozit guclendirme, gaz adsorpsiyonu, kozmetik, ve isil yonetimde uygulamalar bulmustur. Modern elektronik uygulamalar icin, hBN uygulamalarinin tum spektrumunu gerceklestirmek amaci ile yuksek kaliteli ve kontrollu kalinliga sahip BN filmlerin yuksek alanli alttaslar uzerine elde edilmesi gerekmektedir. Ayrica, zehirli olmayan yan urunler elde etmek acisindan standartlarla uyumlu sekide dusuk sicakliklarda BN filmler elde etmek icin halojenur icermeyen oncu maddelerin kullanildigi atomik katman biriktirme (AKB) gibi kolay bir metoda gerek duyulmaktadir. AKB iki ya da daha fazla oncu maddenin arindirma periyotlari ile ayrilmis ardisik atimlarla alttas yuzeyine gonderildigi ozel bir kimyasal buhar biriktirme cesididir. Diger ince film buyutme metodlari ile karsilastirildiginda, AKB yonteminin ayirt edici ozelligi muntazam ve konformal ince filmlerin angstrom-alti kalinlik kontrolu ile biriktirilmesine olanak saglayan kendi kendini sinirlayan buyutme mekanizmasidir. AKB yonteminin kesin ve konformal katman katman buyutme tarzi elektro lif cekimi yontemi ile elde edilmis yuksek boy/en oranina sahip polimer nanolif sablonlar uzerine BN oyuk nanoliflerin buyutulmesini gerceklestirmek amaciyla da kullanilabilir. AKB ve elektro lif cekimi yontemlerinin birlikte kullanilmasiyla uretilen BN oyuk nanolifler, agir hazirlama kosullari, morfoloji uzerindeki sinirli kontrol, ve elde edilen BN oyuk nanoliflerin dusuk safligi gibi, onceki uretim metodlari ile ilgili onemli kisitlamalari tanimlamak ve cozmek amaciyla kullanilabilir.Bu tezde, BN filmlerin ve nanoyapilarin oyuk katod plazma (OKP) kaynagi entegre edilmis bir reaktorun kullanimiyla kontrollu bir sekilde buyutulmesini rapor etmekte, biriktirilen ince filmler ve uretilen nanoyapilar icin detayli malzeme karakterizasyon sonuclari sunmaktayiz. Biriktirmeler dusuk alttas sicakliklarinda (450 °C'den dusuk), boron ve nitrojen oncu maddelerinin, sirasiyla halojenur olmayan trietilbor (TEB) ve N2/H2 plazmanin ardisik enjeksiyonu kullanilarak gerceklestirilmistir. TEB'un atim suresi ve alttas sicakligi gibi biriktirme surec parametrelerinin yanisira biriktirme sonrasi tavlamanin etkileri de incelenmistir. Ayrica, BN filmlerin biriktirilmesi icin tris(dimetil)amidobor (TDMAB) isimli, halojenur icermeyen diger bir alternatif oncu madde arastirilmistir. Ilk deneyler, bor ve nitrojen oncu maddeleri olarak TDMAB ve N2/H2 plazmanin kullanilmasiyla gerceklestirilmistir. BN ince film buyutme calismalarina ek olarak, AlN/BN iki kabuklu oyuk nanoliflerin elektro lif cekimi yontemi ile elde edilmis polimerik nanolif sablon-temelli uretimini ve karakterizasyonunu rapor etmekteyiz. Sentezlenen AlN/BN iki kabuklu oyuk nanoliflerin dusuk safsizlik icerigi ile birlikte hegzagonal yapiya sahip ve cok taneli oldugu bulunmustur.
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650 4 $a Gallium arsenide. $3 3681863
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650 4 $a Molecular beam epitaxy. $3 601057
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