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Extreme Ultraviolet Lensless Microsc...

Wang, Bin,

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Extreme Ultraviolet Lensless Microscopy: Development and Potential Applications to Semiconductor Metrology /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Extreme Ultraviolet Lensless Microscopy: Development and Potential Applications to Semiconductor Metrology // Bin Wang.
Author:	Wang, Bin,
Description:	1 electronic resource (140 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 84-07, Section: B.
Contained By:	Dissertations Abstracts International84-07B.
Subject:	Physics. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29996184
ISBN:	9798363507953

Extreme Ultraviolet Lensless Microscopy: Development and Potential Applications to Semiconductor Metrology /
Wang, Bin,

Extreme Ultraviolet Lensless Microscopy: Development and Potential Applications to Semiconductor Metrology /Bin Wang. - 1 electronic resource (140 pages)

Source: Dissertations Abstracts International, Volume: 84-07, Section: B.

The development and integration of next-generation semiconductor devices is experiencing significant metrology challenges. These devices are ever more complex and three-dimensional in shape and contain ever more types of materials, with critical dimensions of only a few tens of nanometers, or even down to a few nanometers. The structure and composition of these devices, while critical to their overall performance, is extremely difficult to measure non-destructively. Thus, there is an urgent need for non-destructive nano-imaging techniques for general nextgeneration samples. In this thesis, I present the recent development of EUV lensless microscopy by combining the tabletop coherent extreme ultraviolet light sources based on high harmonic generation and the state-of-the-art computational phase retrieval algorithms (ptychography), as well as their potential applications to semiconductor metrology. In particular, I will present our work on designing and commissioning a tabletop EUV actinic microscope that is capable of performing at-wavelength EUV photomask imaging and defect inspection. We further demonstrated for the first time that fast, reliable and robust ptychographic imaging of periodic structures can be achieved by careful illumination design. This is both a critical advancement for the modern ptychography technique and a promising and economic solution for actinic EUV photomask metrology.

English

ISBN: 9798363507953Subjects--Topical Terms:

516296
Physics.
Subjects--Index Terms:

Actinic metrology

Extreme Ultraviolet Lensless Microscopy: Development and Potential Applications to Semiconductor Metrology /
LDR:03006nmm a22004573i 4500 001 2396144
005 20250522083157.5
006 m o d
007 cr|nu||||||||
008 251215s2022 miu||||||m |||||||eng d
020 $a 9798363507953
035 $a (MiAaPQD)AAI29996184
035 $a AAI29996184
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Wang, Bin, $e author. $3 3765726
245 1 0 $a Extreme Ultraviolet Lensless Microscopy: Development and Potential Applications to Semiconductor Metrology / $c Bin Wang.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2022
300 $a 1 electronic resource (140 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 84-07, Section: B.
500 $a Advisors: Murnane, Margaret; Kapteyn, Henry Committee members: McLeod, Robert; Toney, Michael; Raschke, Markus.
502 $b Ph.D. $c University of Colorado at Boulder $d 2022.
520 $a The development and integration of next-generation semiconductor devices is experiencing significant metrology challenges. These devices are ever more complex and three-dimensional in shape and contain ever more types of materials, with critical dimensions of only a few tens of nanometers, or even down to a few nanometers. The structure and composition of these devices, while critical to their overall performance, is extremely difficult to measure non-destructively. Thus, there is an urgent need for non-destructive nano-imaging techniques for general nextgeneration samples. In this thesis, I present the recent development of EUV lensless microscopy by combining the tabletop coherent extreme ultraviolet light sources based on high harmonic generation and the state-of-the-art computational phase retrieval algorithms (ptychography), as well as their potential applications to semiconductor metrology. In particular, I will present our work on designing and commissioning a tabletop EUV actinic microscope that is capable of performing at-wavelength EUV photomask imaging and defect inspection. We further demonstrated for the first time that fast, reliable and robust ptychographic imaging of periodic structures can be achieved by careful illumination design. This is both a critical advancement for the modern ptychography technique and a promising and economic solution for actinic EUV photomask metrology.
546 $a English
590 $a School code: 0051
650 4 $a Physics. $3 516296
650 4 $a Applied physics. $3 3343996
650 4 $a Optics. $3 517925
653 $a Actinic metrology
653 $a EUV photomask
653 $a Extreme Ultraviolet
653 $a High harmonic generation
653 $a Lensless imaging
653 $a Ptychography
690 $a 0605
690 $a 0752
690 $a 0215
710 2 $a University of Colorado at Boulder. $b Physics. $e degree granting institution. $3 3765727
720 1 $a Murnane, Margaret $e degree supervisor.
720 1 $a Kapteyn, Henry $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 84-07B.
790 $a 0051
791 $a Ph.D.
792 $a 2022
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29996184