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Growth and Emergent Functionalities ...

Yang, Detian.

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Growth and Emergent Functionalities of Oxide Thin Films Utilizing Interface Engineering.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Growth and Emergent Functionalities of Oxide Thin Films Utilizing Interface Engineering./
作者:	Yang, Detian.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2023,
面頁冊數:	171 p.
附註:	Source: Dissertations Abstracts International, Volume: 85-01, Section: B.
Contained By:	Dissertations Abstracts International85-01B.
標題:	Physics. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30567441
ISBN:	9798379896638

Growth and Emergent Functionalities of Oxide Thin Films Utilizing Interface Engineering.
Yang, Detian.

Growth and Emergent Functionalities of Oxide Thin Films Utilizing Interface Engineering. - Ann Arbor : ProQuest Dissertations & Theses, 2023 - 171 p.

Source: Dissertations Abstracts International, Volume: 85-01, Section: B.

Thesis (Ph.D.)--The University of Nebraska - Lincoln, 2023.

This item must not be sold to any third party vendors.

Complex oxide interfaces have offered intriguing novel emergent phenomena and multiple functionalities through interfacial reconstructions of spin, orbital, charge, and lattice degrees of freedom. Interface engineering via manipulating interfacial interaction, defects and multiple interfacial quantum charges and orders constitutes the essential method and technique to achieve desired functionalities in oxide heterostructures. In this thesis, shown are two examples of utilizing interfacial reconstruction and interfacial strain engineering to achieve intrinsic exchange bias and realize epitaxial growth of mixed-valence hexagonal manganite thin films, respectively.Firstly, we demonstrated intrinsic exchange bias induced by interfacial reconstruction in NixCoyFe3-x-yO4(111)/α-Al2O3(0001) (0≤x+y≤3) tunable beyond the coercivity. The "hidden" antiferromagnet is proposed to be the rock-salt CoO in the interfacial layer, supported by the data of reflection high energy electron diffraction (RHEED), magnetization characterization, X-ray photoemission spectroscopy, X-ray reflectometry and polarized neutron reflectometry. Such interfacial reconstruction and intrinsic exchange bias can be tuned by Co concentration y and the growth oxygen pressure. This study establishes new material platforms to study novel interfacial structural and magnetic states supporting potential applications in magnetic storage and spintronics and highlight the powerful interface engineering strategy in manipulating material functionalities.Secondly, we have managed to stabilize h-Lu1-xCaxMnO3 (x=0.1,0.2,0.3,0.4,0.5) epitaxial thin films over sapphire and YSZ substrates via pre-depositing a 1 nm h-ReFeO3 or h-ReMnO3 (Re= Y, Ho-Lu, Sc) buffer layer. By selecting varying combinations of buffer layers and substrates, epitaxial h-Lu1- xCaxMnO3 films with both compressive and tensile strain were achieved to certain maximum thicknesses. In h-Lu1-xCaxMnO3/h-ScFeO3/α-Al2O3 samples, thickness-resolved and temperature-resolved RHEED patterns reveal that the geometric polar distortion could be boosted by the doping of Ca, when the doping concentration x ≥ 0.2, the common interface clamping effect that suppresses ferroelectric distortion in the first unit cell of h-ReMnO3 can be eliminated. This work establishes a potential quasi-2D ferroelectric system and suggests a general strain engineering method to strengthen improper ferroelectricity in the ultra-thin regime.

ISBN: 9798379896638Subjects--Topical Terms:

516296
Physics.
Subjects--Index Terms:

Exchange bias

Growth and Emergent Functionalities of Oxide Thin Films Utilizing Interface Engineering.
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300 $a 171 p.
500 $a Source: Dissertations Abstracts International, Volume: 85-01, Section: B.
500 $a Advisor: Xu, Xiaoshan.
502 $a Thesis (Ph.D.)--The University of Nebraska - Lincoln, 2023.
506 $a This item must not be sold to any third party vendors.
520 $a Complex oxide interfaces have offered intriguing novel emergent phenomena and multiple functionalities through interfacial reconstructions of spin, orbital, charge, and lattice degrees of freedom. Interface engineering via manipulating interfacial interaction, defects and multiple interfacial quantum charges and orders constitutes the essential method and technique to achieve desired functionalities in oxide heterostructures. In this thesis, shown are two examples of utilizing interfacial reconstruction and interfacial strain engineering to achieve intrinsic exchange bias and realize epitaxial growth of mixed-valence hexagonal manganite thin films, respectively.Firstly, we demonstrated intrinsic exchange bias induced by interfacial reconstruction in NixCoyFe3-x-yO4(111)/α-Al2O3(0001) (0≤x+y≤3) tunable beyond the coercivity. The "hidden" antiferromagnet is proposed to be the rock-salt CoO in the interfacial layer, supported by the data of reflection high energy electron diffraction (RHEED), magnetization characterization, X-ray photoemission spectroscopy, X-ray reflectometry and polarized neutron reflectometry. Such interfacial reconstruction and intrinsic exchange bias can be tuned by Co concentration y and the growth oxygen pressure. This study establishes new material platforms to study novel interfacial structural and magnetic states supporting potential applications in magnetic storage and spintronics and highlight the powerful interface engineering strategy in manipulating material functionalities.Secondly, we have managed to stabilize h-Lu1-xCaxMnO3 (x=0.1,0.2,0.3,0.4,0.5) epitaxial thin films over sapphire and YSZ substrates via pre-depositing a 1 nm h-ReFeO3 or h-ReMnO3 (Re= Y, Ho-Lu, Sc) buffer layer. By selecting varying combinations of buffer layers and substrates, epitaxial h-Lu1- xCaxMnO3 films with both compressive and tensile strain were achieved to certain maximum thicknesses. In h-Lu1-xCaxMnO3/h-ScFeO3/α-Al2O3 samples, thickness-resolved and temperature-resolved RHEED patterns reveal that the geometric polar distortion could be boosted by the doping of Ca, when the doping concentration x ≥ 0.2, the common interface clamping effect that suppresses ferroelectric distortion in the first unit cell of h-ReMnO3 can be eliminated. This work establishes a potential quasi-2D ferroelectric system and suggests a general strain engineering method to strengthen improper ferroelectricity in the ultra-thin regime.
590 $a School code: 0138.
650 4 $a Physics. $3 516296
650 4 $a Condensed matter physics. $3 3173567
650 4 $a Analytical chemistry. $3 3168300
650 4 $a Electrical engineering. $3 649834
653 $a Exchange bias
653 $a Hexagonal manganites
653 $a Ferroelectricity
653 $a Interface engineering
653 $a Interfacial reconstruction
690 $a 0605
690 $a 0544
690 $a 0486
690 $a 0611
710 2 $a The University of Nebraska - Lincoln. $b Physics & Astronomy. $3 1064692
773 0 $t Dissertations Abstracts International $g 85-01B.
790 $a 0138
791 $a Ph.D.
792 $a 2023
793 $a English
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30567441