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Modeling Electronic Conduction in Qu...

Eshraghi, Kassra.

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Modeling Electronic Conduction in Quantum Dot Materials.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Modeling Electronic Conduction in Quantum Dot Materials./
作者:	Eshraghi, Kassra.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2023,
面頁冊數:	39 p.
附註:	Source: Masters Abstracts International, Volume: 85-07.
Contained By:	Masters Abstracts International85-07.
標題:	Materials science. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30690877
ISBN:	9798381302301

Modeling Electronic Conduction in Quantum Dot Materials.
Eshraghi, Kassra.

Modeling Electronic Conduction in Quantum Dot Materials. - Ann Arbor : ProQuest Dissertations & Theses, 2023 - 39 p.

Source: Masters Abstracts International, Volume: 85-07.

Thesis (M.S.)--University of California, San Diego, 2023.

This item must not be sold to any third party vendors.

Aspects of electrical transport within quantum dot (QD) constituted films are discussed. It is shown that the photoemission efficiency from QD films could be improved by further electrical biasing of devices, owing to the enhancement of tunneling transport. It is also shown that experimentally obtained I-V curves could be described through a 2-step model involving (i) a the tunneling transport of electrons from an electron source, and (ii) Ohmic transport through the film, governed by a temperature (T) dependent mobility. Aspects related to future endeavors in modeling QD materials are also discussed.

ISBN: 9798381302301Subjects--Topical Terms:

543314
Materials science.
Subjects--Index Terms:

Modeling

Modeling Electronic Conduction in Quantum Dot Materials.
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245 1 0 $a Modeling Electronic Conduction in Quantum Dot Materials.
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300 $a 39 p.
500 $a Source: Masters Abstracts International, Volume: 85-07.
500 $a Advisor: Bandaru, Prabhakar.
502 $a Thesis (M.S.)--University of California, San Diego, 2023.
506 $a This item must not be sold to any third party vendors.
520 $a Aspects of electrical transport within quantum dot (QD) constituted films are discussed. It is shown that the photoemission efficiency from QD films could be improved by further electrical biasing of devices, owing to the enhancement of tunneling transport. It is also shown that experimentally obtained I-V curves could be described through a 2-step model involving (i) a the tunneling transport of electrons from an electron source, and (ii) Ohmic transport through the film, governed by a temperature (T) dependent mobility. Aspects related to future endeavors in modeling QD materials are also discussed.
590 $a School code: 0033.
650 4 $a Materials science. $3 543314
650 4 $a Physics. $3 516296
650 4 $a Quantum physics. $3 726746
650 4 $a Transportation. $3 555912
653 $a Modeling
653 $a Photoemission
653 $a Semiconductor
653 $a Transport
690 $a 0794
690 $a 0599
690 $a 0605
690 $a 0709
710 2 $a University of California, San Diego. $b Materials Science and Engineering. $3 1043045
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792 $a 2023
793 $a English
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