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Electronic Transport Properties of N...

Mazzucca, Nicholas.

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Electronic Transport Properties of Novel Correlated and Disorder-Induced Insulators.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Electronic Transport Properties of Novel Correlated and Disorder-Induced Insulators./
作者:	Mazzucca, Nicholas.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2023,
面頁冊數:	116 p.
附註:	Source: Dissertations Abstracts International, Volume: 85-04, Section: B.
Contained By:	Dissertations Abstracts International85-04B.
標題:	Physics. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30788345
ISBN:	9798380595902

Electronic Transport Properties of Novel Correlated and Disorder-Induced Insulators.
Mazzucca, Nicholas.

Electronic Transport Properties of Novel Correlated and Disorder-Induced Insulators. - Ann Arbor : ProQuest Dissertations & Theses, 2023 - 116 p.

Source: Dissertations Abstracts International, Volume: 85-04, Section: B.

Thesis (Ph.D.)--The Ohio State University, 2023.

This item must not be sold to any third party vendors.

Nominally metallic systems can be rendered insulating by electronic interactions, disorder, or both, leading to a myriad of interesting many-body phases. In this thesis, we present electronic transport data on a variety of such insulator materials, each with their own unique emergent phenomena. We start with few-layer graphene (FLG), the multilayer counterpart to monolayer graphene, and show that electronic interactions can lead to the development of an electronic energy gap in the band structure near charge neutrality. Previously, this has been associated with spontaneous inversion symmetry breaking, but has only been observed in suspended devices of the highest quality. Here, we show that similar physics can be observed in hexagonal boron nitride-encapsulated devices, alleviating the requirement for suspension. Moreover, in very thick FLG samples, typically thick enough to be considered as three-dimensional graphite, we show the existence of fractional quantum Hall states that are extended through the bulk of the material. Next, we turn to Pt-doped TiSe2, where the interplay between a charge density wave state and a newly discovered quasi one-dimensional insulating state gives rise to ultra slow time-scale physics, along with a strong resistance anisotropy. Finally, transport data as well as angle-resolved photoemission spectroscopy data on Se-doped Ge2Sb2Te5 devices are shown. Here, a disorder-induced metal-to-insulator transition exhibits unique properties, which we attribute to the onset of strong electronic interactions.

ISBN: 9798380595902Subjects--Topical Terms:

516296
Physics.
Subjects--Index Terms:

Graphene

Electronic Transport Properties of Novel Correlated and Disorder-Induced Insulators.
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245 1 0 $a Electronic Transport Properties of Novel Correlated and Disorder-Induced Insulators.
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300 $a 116 p.
500 $a Source: Dissertations Abstracts International, Volume: 85-04, Section: B.
500 $a Advisor: Bockrath, Marc.
502 $a Thesis (Ph.D.)--The Ohio State University, 2023.
506 $a This item must not be sold to any third party vendors.
520 $a Nominally metallic systems can be rendered insulating by electronic interactions, disorder, or both, leading to a myriad of interesting many-body phases. In this thesis, we present electronic transport data on a variety of such insulator materials, each with their own unique emergent phenomena. We start with few-layer graphene (FLG), the multilayer counterpart to monolayer graphene, and show that electronic interactions can lead to the development of an electronic energy gap in the band structure near charge neutrality. Previously, this has been associated with spontaneous inversion symmetry breaking, but has only been observed in suspended devices of the highest quality. Here, we show that similar physics can be observed in hexagonal boron nitride-encapsulated devices, alleviating the requirement for suspension. Moreover, in very thick FLG samples, typically thick enough to be considered as three-dimensional graphite, we show the existence of fractional quantum Hall states that are extended through the bulk of the material. Next, we turn to Pt-doped TiSe2, where the interplay between a charge density wave state and a newly discovered quasi one-dimensional insulating state gives rise to ultra slow time-scale physics, along with a strong resistance anisotropy. Finally, transport data as well as angle-resolved photoemission spectroscopy data on Se-doped Ge2Sb2Te5 devices are shown. Here, a disorder-induced metal-to-insulator transition exhibits unique properties, which we attribute to the onset of strong electronic interactions.
590 $a School code: 0168.
650 4 $a Physics. $3 516296
650 4 $a Condensed matter physics. $3 3173567
650 4 $a Materials science. $3 543314
650 4 $a Electrical engineering. $3 649834
653 $a Graphene
653 $a Charge density wave
653 $a Fractional quantum Hall effect
653 $a Symmetry breaking
653 $a Strong resistance anisotropy
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690 $a 0544
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690 $a 0611
710 2 $a The Ohio State University. $b Physics. $3 2096699
773 0 $t Dissertations Abstracts International $g 85-04B.
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792 $a 2023
793 $a English
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30788345