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Characterization and energy loss evaluation of wide bandgap semiconductor devices.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Characterization and energy loss evaluation of wide bandgap semiconductor devices./
作者:	Ghosh, Arnab.
面頁冊數:	1 online resource (89 pages)
附註:	Source: Masters Abstracts International, Volume: 77-12.
Contained By:	Masters Abstracts International77-12.
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10112460click for full text (PQDT)
ISBN:	9781339756141

Characterization and energy loss evaluation of wide bandgap semiconductor devices.
Ghosh, Arnab.

Characterization and energy loss evaluation of wide bandgap semiconductor devices. - 1 online resource (89 pages)

Source: Masters Abstracts International, Volume: 77-12.

Thesis (M.S.)--Tennessee Technological University, 2016.

Includes bibliographical references

In today's world we face numerous challenges in energy conservation and reduction of carbon emissions. One of the ways to reduce emissions is to make our appliances more efficient and reduce our energy consumption. Although silicon is the foundation of modern electronics, current technology using silicon as the primary semiconductor is reaching its limit. Wide band gap semiconductors can operate at higher temperatures up to 300°C, block ten times higher voltages and are up to ninety percent more efficient compared to current silicon technology, which enable us to greatly reduce energy losses. In this thesis, three wide bandgap semiconductor devices were characterized to determine their electrical properties. The switching losses were measured using a double pulse test circuit. The devices include a Silicon Carbide (SiC) MOSFET, a SiC bipolar junction transistor and a Gallium Nitride (GaN) transistor. The characterization revealed the superior material properties of wide bandgap devices over Silicon. The higher electrical breakdown ratings, better static characteristics, faster switching times and lower switching losses were verified through electrical characterization. Also the device limitations and problems with device handling were analysed. The factors which affect device performance and lead to degradation of the devices were discussed and remedial measures proposed. In order to demonstrate the superior material properties of wide bandgap semiconductors over silicon, a three phase inverter using SiC switches was constructed and its performance analyzed. Measurement of the switching losses and the subsequent inverter efficiency proved that wide bandgap devices can help reduce energy consumption and lower the cost of power converters due to their advantages over conventional Silicon technology.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9781339756141Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

CharacterizationIndex Terms--Genre/Form:

542853
Electronic books.

Characterization and energy loss evaluation of wide bandgap semiconductor devices.
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500 $a Publisher info.: Dissertation/Thesis.
500 $a Advisor: Johnson, R. Wayne.
502 $a Thesis (M.S.)--Tennessee Technological University, 2016.
504 $a Includes bibliographical references
520 $a In today's world we face numerous challenges in energy conservation and reduction of carbon emissions. One of the ways to reduce emissions is to make our appliances more efficient and reduce our energy consumption. Although silicon is the foundation of modern electronics, current technology using silicon as the primary semiconductor is reaching its limit. Wide band gap semiconductors can operate at higher temperatures up to 300°C, block ten times higher voltages and are up to ninety percent more efficient compared to current silicon technology, which enable us to greatly reduce energy losses. In this thesis, three wide bandgap semiconductor devices were characterized to determine their electrical properties. The switching losses were measured using a double pulse test circuit. The devices include a Silicon Carbide (SiC) MOSFET, a SiC bipolar junction transistor and a Gallium Nitride (GaN) transistor. The characterization revealed the superior material properties of wide bandgap devices over Silicon. The higher electrical breakdown ratings, better static characteristics, faster switching times and lower switching losses were verified through electrical characterization. Also the device limitations and problems with device handling were analysed. The factors which affect device performance and lead to degradation of the devices were discussed and remedial measures proposed. In order to demonstrate the superior material properties of wide bandgap semiconductors over silicon, a three phase inverter using SiC switches was constructed and its performance analyzed. Measurement of the switching losses and the subsequent inverter efficiency proved that wide bandgap devices can help reduce energy consumption and lower the cost of power converters due to their advantages over conventional Silicon technology.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2023
538 $a Mode of access: World Wide Web
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653 $a Pwm inverter
653 $a SiC
653 $a Wide bandgap
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