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Electron tunneling studies in tantalum overlayers on niobium and in tantalum and niobium nitride films.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Electron tunneling studies in tantalum overlayers on niobium and in tantalum and niobium nitride films./
Author:	Track, Elie Khalil.
Description:	1 online resource (227 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 51-09, Section: B.
Contained By:	Dissertations Abstracts International51-09B.
Subject:	Condensation. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9009430click for full text (PQDT)
ISBN:	9798206163803

Electron tunneling studies in tantalum overlayers on niobium and in tantalum and niobium nitride films.
Track, Elie Khalil.

Electron tunneling studies in tantalum overlayers on niobium and in tantalum and niobium nitride films. - 1 online resource (227 pages)

Source: Dissertations Abstracts International, Volume: 51-09, Section: B.

Thesis (Ph.D.)--Yale University, 1988.

Includes bibliographical references

Tunneling measurements have been performed on tantalum surface layers on niobium. The thickness of the tantalum layer ranges from 10 to 100 A. The critical current, bound-state energy, phonon structure, and oxide barrier shape are investigated. The results are compared with an extended version of the Gallagher theory which accounts for both the finite mean free path in the Ta overlayers and suppression of the IcR product due to strong electron-phonon coupling effects. Excellent fits to the data yield a value of the intrinsic scattering probability for electrons at the Ta/Nb interface of r² = 0.01. In addition, a new fabrication technique--dual ion-beam sputtering--is used to deposit thin films of NbN. The properties of these films and of tunnel junctions formed with NbN as base electrode and native-oxide as well as artificial barriers are reported. A universal empirical correlation is found between the average barrier height ɸ and the effective barrier width d for measured junctions. This correlation, which holds both for our data and for available data in the literature for oxide-barrier junctions, is discussed in the general context of oxide growth and compared with results for artificial tunnel barriers. Finally, high quality Ta/PbBi tunnel junction of area ≤1 μm² and current density 10³-10⁵ A/cm² are produced using a window geometry. The electrical noise properties of these junctions are investigated. Discrete voltage switching events allow the identification of the effect of single localized states in the oxide barrier. The voltage and temperature dependence of the switching rates are consistent with a microscopic model based on the emission and capture of individual electrons at the localized sites within the barrier.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9798206163803Subjects--Topical Terms:

942542
Condensation.
Subjects--Index Terms:

Niobium nitrideIndex Terms--Genre/Form:

542853
Electronic books.

Electron tunneling studies in tantalum overlayers on niobium and in tantalum and niobium nitride films.
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245 1 0 $a Electron tunneling studies in tantalum overlayers on niobium and in tantalum and niobium nitride films.
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500 $a Source: Dissertations Abstracts International, Volume: 51-09, Section: B.
500 $a Publisher info.: Dissertation/Thesis.
502 $a Thesis (Ph.D.)--Yale University, 1988.
504 $a Includes bibliographical references
520 $a Tunneling measurements have been performed on tantalum surface layers on niobium. The thickness of the tantalum layer ranges from 10 to 100 A. The critical current, bound-state energy, phonon structure, and oxide barrier shape are investigated. The results are compared with an extended version of the Gallagher theory which accounts for both the finite mean free path in the Ta overlayers and suppression of the IcR product due to strong electron-phonon coupling effects. Excellent fits to the data yield a value of the intrinsic scattering probability for electrons at the Ta/Nb interface of r² = 0.01. In addition, a new fabrication technique--dual ion-beam sputtering--is used to deposit thin films of NbN. The properties of these films and of tunnel junctions formed with NbN as base electrode and native-oxide as well as artificial barriers are reported. A universal empirical correlation is found between the average barrier height ɸ and the effective barrier width d for measured junctions. This correlation, which holds both for our data and for available data in the literature for oxide-barrier junctions, is discussed in the general context of oxide growth and compared with results for artificial tunnel barriers. Finally, high quality Ta/PbBi tunnel junction of area ≤1 μm² and current density 10³-10⁵ A/cm² are produced using a window geometry. The electrical noise properties of these junctions are investigated. Discrete voltage switching events allow the identification of the effect of single localized states in the oxide barrier. The voltage and temperature dependence of the switching rates are consistent with a microscopic model based on the emission and capture of individual electrons at the localized sites within the barrier.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2023
538 $a Mode of access: World Wide Web
650 4 $a Condensation. $3 942542
650 4 $a Condensed matter physics. $3 3173567
653 $a Niobium nitride
653 $a Tantalum
655 7 $a Electronic books. $2 lcsh $3 542853
690 $a 0611
710 2 $a ProQuest Information and Learning Co. $3 783688
710 2 $a Yale University. $3 515640
773 0 $t Dissertations Abstracts International $g 51-09B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9009430 $z click for full text (PQDT)