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Transient Effects in Solution-Processed Organic Thin Films.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Transient Effects in Solution-Processed Organic Thin Films./
Author:	Wan, Jing.
Description:	1 online resource (168 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 83-03, Section: B.
Contained By:	Dissertations Abstracts International83-03B.
Subject:	Condensed matter physics. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28715404click for full text (PQDT)
ISBN:	9798535597010

Transient Effects in Solution-Processed Organic Thin Films.
Wan, Jing.

Transient Effects in Solution-Processed Organic Thin Films. - 1 online resource (168 pages)

Source: Dissertations Abstracts International, Volume: 83-03, Section: B.

Thesis (Ph.D.)--The University of Vermont and State Agricultural College, 2021.

Includes bibliographical references

Due to the weak van der Waals forces between organic semiconductor molecules, the molecular packing depends sensitively on the processing methods and conditions. Thus, understanding the crystallization mechanisms during solution deposition are essential for fundamental studies and reproducible fabrication of electronic devices.The performance of Organic field effect transistors (OFETs) also depends heavily on extrinsic factors such as contact resistance and interfacial defects, which can produce a different kind of transient effect at the metal-semiconductor contact.We have observed structural transient effects during the crystallization process of two small molecule organic semiconductors made from solution. We report in situ X-ray scattering studies of the crystallization of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) and 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C10) during its deposition from solution. Multiple transient phases are observed for both materials during the crystallization before the final stable phase when substrate temperatures were 2 - 35 °C below the bulk phase transition temperature. Below the transition temperature the crystalline phases are stable. However, the high temperature smectic liquid-crystalline phases are observed first, but they exist for a limited time. In addition, for Ph-BTBT-C10 complex dynamics occur in the first few seconds as the transient liquid crystal phase is forming, possibly due to residual solvent. Transient phases are of potential interest for applications, since they can act as a route to self-assembly of organic thin films. Based on these results, we demonstrate a method to produce extremely large grain size and high carrier mobility (3.0 cm2/V·s) during high-speed processing.The other transient effect is observed in the top contact OFETs made from solution processed C8-BTBT thin films when stored in ambient conditions. We report observations of time-dependent carrier transport in field-effect transistors through intermittent characterization of current-voltage characteristics. This effect is characterized by a large increase of drain current and near-elimination of large negative threshold (Vth), which progressively reduces over a period of hours. Our results show that this elimination of non-ideality is predominantly caused by light exposure. We attribute these effects to a Schottky Barrier at the metal / semiconductor interface, modulated by charging of gold particles that form during gold vapor deposition onto organic semiconductor thin films. We also confirm that bottom contact transistors are free of the anomalous effect, consistent with the absence of metal particles near the interface. A detailed understanding is developed for the mechanisms contributing to non-ideal carrier injection, aging, and instability of C8-BTBT top contact transistors.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2023

Mode of access: World Wide Web

ISBN: 9798535597010Subjects--Topical Terms:

3173567
Condensed matter physics.
Subjects--Index Terms:

Contact resistanceIndex Terms--Genre/Form:

542853
Electronic books.

Transient Effects in Solution-Processed Organic Thin Films.
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500 $a Source: Dissertations Abstracts International, Volume: 83-03, Section: B.
500 $a Advisor: Headrick, Randall.
502 $a Thesis (Ph.D.)--The University of Vermont and State Agricultural College, 2021.
504 $a Includes bibliographical references
520 $a Due to the weak van der Waals forces between organic semiconductor molecules, the molecular packing depends sensitively on the processing methods and conditions. Thus, understanding the crystallization mechanisms during solution deposition are essential for fundamental studies and reproducible fabrication of electronic devices.The performance of Organic field effect transistors (OFETs) also depends heavily on extrinsic factors such as contact resistance and interfacial defects, which can produce a different kind of transient effect at the metal-semiconductor contact.We have observed structural transient effects during the crystallization process of two small molecule organic semiconductors made from solution. We report in situ X-ray scattering studies of the crystallization of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) and 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C10) during its deposition from solution. Multiple transient phases are observed for both materials during the crystallization before the final stable phase when substrate temperatures were 2 - 35 °C below the bulk phase transition temperature. Below the transition temperature the crystalline phases are stable. However, the high temperature smectic liquid-crystalline phases are observed first, but they exist for a limited time. In addition, for Ph-BTBT-C10 complex dynamics occur in the first few seconds as the transient liquid crystal phase is forming, possibly due to residual solvent. Transient phases are of potential interest for applications, since they can act as a route to self-assembly of organic thin films. Based on these results, we demonstrate a method to produce extremely large grain size and high carrier mobility (3.0 cm2/V·s) during high-speed processing.The other transient effect is observed in the top contact OFETs made from solution processed C8-BTBT thin films when stored in ambient conditions. We report observations of time-dependent carrier transport in field-effect transistors through intermittent characterization of current-voltage characteristics. This effect is characterized by a large increase of drain current and near-elimination of large negative threshold (Vth), which progressively reduces over a period of hours. Our results show that this elimination of non-ideality is predominantly caused by light exposure. We attribute these effects to a Schottky Barrier at the metal / semiconductor interface, modulated by charging of gold particles that form during gold vapor deposition onto organic semiconductor thin films. We also confirm that bottom contact transistors are free of the anomalous effect, consistent with the absence of metal particles near the interface. A detailed understanding is developed for the mechanisms contributing to non-ideal carrier injection, aging, and instability of C8-BTBT top contact transistors.
533 $a Electronic reproduction. $b Ann Arbor, Mich. : $c ProQuest, $d 2023
538 $a Mode of access: World Wide Web
650 4 $a Condensed matter physics. $3 3173567
650 4 $a Organic chemistry. $3 523952
650 4 $a Materials science. $3 543314
650 4 $a Microscopy. $3 540544
650 4 $a Crystallization. $3 608799
650 4 $a Time series. $3 3561811
650 4 $a Transistors. $3 713271
650 4 $a Thin films. $3 626403
650 4 $a Morphology. $3 591167
650 4 $a X-rays. $3 604695
653 $a Contact resistance
653 $a Metal semiconductor interface
653 $a Organic thin film Crystallization
653 $a Photoconductivity
653 $a Solution processing
653 $a Transient phases
655 7 $a Electronic books. $2 lcsh $3 542853
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690 $a 0611
690 $a 0490
690 $a 0287
710 2 $a ProQuest Information and Learning Co. $3 783688
710 2 $a The University of Vermont and State Agricultural College. $b Physics. $3 3699442
773 0 $t Dissertations Abstracts International $g 83-03B.
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28715404 $z click for full text (PQDT)