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Molecular Beam Epitaxy (MBE) II-VI-III-V System for Photonic and Electronic Devices.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Molecular Beam Epitaxy (MBE) II-VI-III-V System for Photonic and Electronic Devices./
Author:	Fan, Zongjian.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
Description:	112 p.
Notes:	Source: Dissertations Abstracts International, Volume: 83-03, Section: B.
Contained By:	Dissertations Abstracts International83-03B.
Subject:	Electrical engineering. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28495177
ISBN:	9798538100231

Molecular Beam Epitaxy (MBE) II-VI-III-V System for Photonic and Electronic Devices.
Fan, Zongjian.

Molecular Beam Epitaxy (MBE) II-VI-III-V System for Photonic and Electronic Devices. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 112 p.

Source: Dissertations Abstracts International, Volume: 83-03, Section: B.

Thesis (Ph.D.)--University of California, Davis, 2021.

This item must not be sold to any third party vendors.

Comprehensive investigations of the materials properties and device applications made from molecular beam epitaxy (MBE) prepared ZnSe-GaAs epilayers have been performed. The properties of ZnSe-GaAs (100) interfaces were studied in order to enable the fabrication of high quality ZnSe-GaAs heterovalent structures (HS). The atomic structure of the ZnSe/GaAs interface with different surface terminations of GaAs was examined. ZnSe deposited on Ga-terminated GaAs was found to have a superior optical and microstructural quality. It is a highly coherent interface consisting of a mixture of both GaAs and ZnSe atomic constituents. To prepare GaAs on ZnSe interfaces, a low-temperature migration enhanced epitaxy (LT-MEE) growth technique was developed to grow GaAs layers under the conditions compatible with ZnSe. Both Ga and As-initialized LT-MEE GaAs/ZnSe interfaces were investigated. A defective transition layer was observed along the As-initialized GaAs/ZnSe interface, which may be attributed to the formation of the Zn3As2 compound. The correlation between the observed optical and structural properties of ZnSe-GaAs interfaces and growth conditions is discussed in detail.The second component of this thesis was to study ZnSe/GaAs/ZnSe quantum well (QW) structures for potential light emitting devices. Unfortunately, ZnSe/GaAs based QWs formed with abrupt interfaces cannot produce ideal photoluminescence (PL) performance due to inherent defect formation at heterovalent interfaces. However, Ga-initialized MEE GaAs growth and high temperature annealing was found to be able to facilitate a compositionally graded ZnSe-GaAs interface. The annealed QW structures exhibited strong, novel PL emission with broad peaks from 500-800 nm at room temperature. Transmission electron microscopy (TEM) results revealed that the annealed QW structure has an intermixed ZnSe-GaAs layer in the QW region with all four elements. Detailed investigations have been conducted to understand the luminescence mechanism. Evidence suggested that intermixed ZnSe-GaAs was responsible for the broad PL emission.Finally, novel ohmic contacts to n-ZnSe were demonstrated using both in-situ deposited single crystal Al films by MBE, and ex-situ deposited Cu films. For Al contacts, electron backscatter diffraction (EBSD) confirmed the single crystalline structure of the Al films. The (110)-oriented Al layer was rotated 45° relative to the substrate to match the ZnSe (100) lattice constant. Leaky Schottky behavior in lightly doped ZnSe samples suggested that Al-ZnSe formed a low-barrier height, Schottky limit contact. For Cu contact, X-ray photoelectron spectroscopy (XPS) detected the traces of Cu2Se bonding environment at Cu/ZnSe interface, which contributed to the ohmic contact formation. Both as-grown contacts exhibited nearly ideal ohmic electrical characteristics without any additional treatment. The contact resistances are in a range of 10-3 Ω cm2 for even lightly doped ZnSe. The novel metallization method could greatly simplify the ZnSe-based device fabrication complexity and lower the cost.

ISBN: 9798538100231Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Interfaces

Molecular Beam Epitaxy (MBE) II-VI-III-V System for Photonic and Electronic Devices.
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500 $a Source: Dissertations Abstracts International, Volume: 83-03, Section: B.
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502 $a Thesis (Ph.D.)--University of California, Davis, 2021.
506 $a This item must not be sold to any third party vendors.
520 $a Comprehensive investigations of the materials properties and device applications made from molecular beam epitaxy (MBE) prepared ZnSe-GaAs epilayers have been performed. The properties of ZnSe-GaAs (100) interfaces were studied in order to enable the fabrication of high quality ZnSe-GaAs heterovalent structures (HS). The atomic structure of the ZnSe/GaAs interface with different surface terminations of GaAs was examined. ZnSe deposited on Ga-terminated GaAs was found to have a superior optical and microstructural quality. It is a highly coherent interface consisting of a mixture of both GaAs and ZnSe atomic constituents. To prepare GaAs on ZnSe interfaces, a low-temperature migration enhanced epitaxy (LT-MEE) growth technique was developed to grow GaAs layers under the conditions compatible with ZnSe. Both Ga and As-initialized LT-MEE GaAs/ZnSe interfaces were investigated. A defective transition layer was observed along the As-initialized GaAs/ZnSe interface, which may be attributed to the formation of the Zn3As2 compound. The correlation between the observed optical and structural properties of ZnSe-GaAs interfaces and growth conditions is discussed in detail.The second component of this thesis was to study ZnSe/GaAs/ZnSe quantum well (QW) structures for potential light emitting devices. Unfortunately, ZnSe/GaAs based QWs formed with abrupt interfaces cannot produce ideal photoluminescence (PL) performance due to inherent defect formation at heterovalent interfaces. However, Ga-initialized MEE GaAs growth and high temperature annealing was found to be able to facilitate a compositionally graded ZnSe-GaAs interface. The annealed QW structures exhibited strong, novel PL emission with broad peaks from 500-800 nm at room temperature. Transmission electron microscopy (TEM) results revealed that the annealed QW structure has an intermixed ZnSe-GaAs layer in the QW region with all four elements. Detailed investigations have been conducted to understand the luminescence mechanism. Evidence suggested that intermixed ZnSe-GaAs was responsible for the broad PL emission.Finally, novel ohmic contacts to n-ZnSe were demonstrated using both in-situ deposited single crystal Al films by MBE, and ex-situ deposited Cu films. For Al contacts, electron backscatter diffraction (EBSD) confirmed the single crystalline structure of the Al films. The (110)-oriented Al layer was rotated 45° relative to the substrate to match the ZnSe (100) lattice constant. Leaky Schottky behavior in lightly doped ZnSe samples suggested that Al-ZnSe formed a low-barrier height, Schottky limit contact. For Cu contact, X-ray photoelectron spectroscopy (XPS) detected the traces of Cu2Se bonding environment at Cu/ZnSe interface, which contributed to the ohmic contact formation. Both as-grown contacts exhibited nearly ideal ohmic electrical characteristics without any additional treatment. The contact resistances are in a range of 10-3 Ω cm2 for even lightly doped ZnSe. The novel metallization method could greatly simplify the ZnSe-based device fabrication complexity and lower the cost.
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