東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

FindBook

Google Book

Amazon

博客來

Comparative Analysis and Demonstration of Monolithic Integration in High-Voltage Gallium Nitride Processes.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Comparative Analysis and Demonstration of Monolithic Integration in High-Voltage Gallium Nitride Processes./
作者:	Jiang, Wan Lin.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
面頁冊數:	129 p.
附註:	Source: Masters Abstracts International, Volume: 83-02.
Contained By:	Masters Abstracts International83-02.
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28416673
ISBN:	9798522944049

Comparative Analysis and Demonstration of Monolithic Integration in High-Voltage Gallium Nitride Processes.
Jiang, Wan Lin.

Comparative Analysis and Demonstration of Monolithic Integration in High-Voltage Gallium Nitride Processes. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 129 p.

Source: Masters Abstracts International, Volume: 83-02.

Thesis (M.A.S.)--University of Toronto (Canada), 2021.

This item must not be sold to any third party vendors.

Gallium Nitride (GaN) power e-HEMT, a popular alternative to Si in high temperature and high voltage power applications, can be monolithically integrated with low-voltage HEMTs, passive components and diodes. Through comparative analysis between the experimental performance of LV circuits, fabricated using ON Semiconductor's 650-V GaN-on-Si and imec's 200-V GaN-on-SOI process, and simulated results from their BCD-counterparts, this thesis identifies the types of circuits that are suitable for monolithic GaN integration based on the processed-power and operating frequency of an application. Using the GaN-on-SOI technology, a binary-weighted segmented gate-driver is fabricated with a power-HEMT, controlling the HEMT's voltage slew-rate and overshoot. The power-HEMT has embedded current and temperature sensing structures. A monolithic high-voltage floating level-shifter and a programmable deadtime generation circuit, as building blocks to a GaN half-bridge IC controlled using a single low-side gating signal, are built and tested.

ISBN: 9798522944049Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Gate-driver

Comparative Analysis and Demonstration of Monolithic Integration in High-Voltage Gallium Nitride Processes.
LDR:02298nmm a2200397 4500 001 2343178
005 20220502104153.5
008 241004s2021 ||||||||||||||||| ||eng d
020 $a 9798522944049
035 $a (MiAaPQ)AAI28416673
035 $a AAI28416673
040 $a MiAaPQ $c MiAaPQ
100 1 $a Jiang, Wan Lin. $0 (orcid)0000-0003-4288-9015 $3 3681645
245 1 0 $a Comparative Analysis and Demonstration of Monolithic Integration in High-Voltage Gallium Nitride Processes.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2021
300 $a 129 p.
500 $a Source: Masters Abstracts International, Volume: 83-02.
500 $a Advisor: Trescases, Olivier.
502 $a Thesis (M.A.S.)--University of Toronto (Canada), 2021.
506 $a This item must not be sold to any third party vendors.
520 $a Gallium Nitride (GaN) power e-HEMT, a popular alternative to Si in high temperature and high voltage power applications, can be monolithically integrated with low-voltage HEMTs, passive components and diodes. Through comparative analysis between the experimental performance of LV circuits, fabricated using ON Semiconductor's 650-V GaN-on-Si and imec's 200-V GaN-on-SOI process, and simulated results from their BCD-counterparts, this thesis identifies the types of circuits that are suitable for monolithic GaN integration based on the processed-power and operating frequency of an application. Using the GaN-on-SOI technology, a binary-weighted segmented gate-driver is fabricated with a power-HEMT, controlling the HEMT's voltage slew-rate and overshoot. The power-HEMT has embedded current and temperature sensing structures. A monolithic high-voltage floating level-shifter and a programmable deadtime generation circuit, as building blocks to a GaN half-bridge IC controlled using a single low-side gating signal, are built and tested.
590 $a School code: 0779.
650 4 $a Electrical engineering. $3 649834
650 4 $a Engineering. $3 586835
650 4 $a Mechanical engineering. $3 649730
650 4 $a Simulation. $3 644748
650 4 $a Velocity. $3 3560495
650 4 $a Plasma. $3 877619
650 4 $a DVD. $3 2025112
650 4 $a Transplants & implants. $3 3562683
650 4 $a Silicon carbide. $3 827236
650 4 $a Trends. $3 3560051
650 4 $a Semiconductors. $3 516162
650 4 $a Electric fields. $3 880423
650 4 $a Printed circuit boards. $3 3560292
650 4 $a Design. $3 518875
650 4 $a CMOS. $3 3681646
650 4 $a Transistors. $3 713271
650 4 $a Packaging. $3 585030
650 4 $a Bridges. $3 868720
653 $a Gate-driver
653 $a High-electron-mobility transistor
653 $a Power management integrated circuits
653 $a Power converter
653 $a Power electronics
690 $a 0544
690 $a 0537
690 $a 0548
690 $a 0389
690 $a 0549
710 2 $a University of Toronto (Canada). $b Electrical and Computer Engineering. $3 2096349
773 0 $t Masters Abstracts International $g 83-02.
790 $a 0779
791 $a M.A.S.
792 $a 2021
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28416673