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研究以磁控濺鍍法成長含鑭摻雜之鋇錫氧薄膜以追求高平整度之退火條件 = =...

陳怡嘉

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研究以磁控濺鍍法成長含鑭摻雜之鋇錫氧薄膜以追求高平整度之退火條件 = = Study on the annealing conditions for growing La-doped BaSnO3 thin films by magnetron sputtering in pursuit of high flatness /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	研究以磁控濺鍍法成長含鑭摻雜之鋇錫氧薄膜以追求高平整度之退火條件 =/ 彭得境撰
Reminder of title:	Study on the annealing conditions for growing La-doped BaSnO3 thin films by magnetron sputtering in pursuit of high flatness /
remainder title:	Study on the annealing conditions for growing La-doped BaSnO3 thin films by magnetron sputtering in pursuit of high flatness
Author:	彭得境
other author:	陳怡嘉
Published:	花蓮縣 :國立東華大學材料科學與工程學系一般組, : 2023,
Description:	[10], 79面 :圖,表格 ;30公分
Notes:	校內電子全文開放日期:2025/08/28
Subject:	鑭鋇錫氧 -
Online resource:	http://134.208.29.108/cgi-bin/gs32/gsweb.cgi?o=dstdcdr&s=G0611022104.id&searchmode=basic電子全文(依作者授權而定)

研究以磁控濺鍍法成長含鑭摻雜之鋇錫氧薄膜以追求高平整度之退火條件 = = Study on the annealing conditions for growing La-doped BaSnO3 thin films by magnetron sputtering in pursuit of high flatness /
彭得境

研究以磁控濺鍍法成長含鑭摻雜之鋇錫氧薄膜以追求高平整度之退火條件 =Study on the annealing conditions for growing La-doped BaSnO3 thin films by magnetron sputtering in pursuit of high flatness /Study on the annealing conditions for growing La-doped BaSnO3 thin films by magnetron sputtering in pursuit of high flatness彭得境撰 - 花蓮縣 :國立東華大學材料科學與工程學系一般組, 2023 - [10], 79面 :圖,表格 ;30公分

校內電子全文開放日期:2025/08/28

碩士論文--國立東華大學材料科學與工程學系一般組, 2023

含參考書目Subjects--Topical Terms:

3642888
鑭鋇錫氧

研究以磁控濺鍍法成長含鑭摻雜之鋇錫氧薄膜以追求高平整度之退火條件 = = Study on the annealing conditions for growing La-doped BaSnO3 thin films by magnetron sputtering in pursuit of high flatness /
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500 $a 校外電子全文開放日期:2025/08/28
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500 $a 畢業學年度:111
500 $a 指導教授:陳怡嘉
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650 # 7 $a 鑭鋇錫氧 $2 lcstt $3 3642888
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650 # 7 $a flatness $2 lcstt $3 3644336
700 1 # $a 陳怡嘉 $e 指導 $3 2994733
700 1 # $a Chen, Yi-Jia $e 指導 $3 3380473
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