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RF and time-domain techniques for evaluating novel semiconductor transistors

Record Type:	Electronic resources : Monograph/item
Title/Author:	RF and time-domain techniques for evaluating novel semiconductor transistors/ by Keith A. Jenkins.
Author:	Jenkins, Keith A.
Published:	Cham :Springer International Publishing : : 2022.,
Description:	xi, 168 p. :ill., digital ;24 cm.
[NT 15003449]:	Introduction -- Signal propagation & connection to devices -- Frequency characterization of devices -- Spectral analysis techniques -- Device propagation delay -- Jitter measurement -- Transient and time-dependent phenomena.
Contained By:	Springer Nature eBook
Subject:	Field-effect transistors. -
Online resource:	https://doi.org/10.1007/978-3-030-77775-3
ISBN:	9783030777753

RF and time-domain techniques for evaluating novel semiconductor transistors
Jenkins, Keith A.

RF and time-domain techniques for evaluating novel semiconductor transistors[electronic resource] /by Keith A. Jenkins. - Cham :Springer International Publishing :2022. - xi, 168 p. :ill., digital ;24 cm.

Introduction -- Signal propagation & connection to devices -- Frequency characterization of devices -- Spectral analysis techniques -- Device propagation delay -- Jitter measurement -- Transient and time-dependent phenomena.

This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.

ISBN: 9783030777753

Standard No.: 10.1007/978-3-030-77775-3doiSubjects--Topical Terms:

700655
Field-effect transistors.

LC Class. No.: TK7871.95 / .J45 2022

Dewey Class. No.: 621.3815284

RF and time-domain techniques for evaluating novel semiconductor transistors
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245 1 0 $a RF and time-domain techniques for evaluating novel semiconductor transistors $h [electronic resource] / $c by Keith A. Jenkins.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2022.
300 $a xi, 168 p. : $b ill., digital ; $c 24 cm.
505 0 $a Introduction -- Signal propagation & connection to devices -- Frequency characterization of devices -- Spectral analysis techniques -- Device propagation delay -- Jitter measurement -- Transient and time-dependent phenomena.
520 $a This book presents a variety of techniques using high-frequency (RF) and time-domain measurements to understand the electrical performance of novel, modern transistors made of materials such as graphene, carbon nanotubes, and silicon-on-insulator, and using new transistor structures. The author explains how to use conventional RF and time- domain measurements to characterize the performance of the transistors. In addition, he explains how novel transistors may be subject to effects such as self-heating, period-dependent output, non-linearity, susceptibility to short-term degradation, DC-invisible structural defects, and a different response to DC and transient inputs. Readers will understand that in order to fully understand and characterize the behavior of a novel transistor, there is an arsenal of dynamic techniques available. In addition to abstract concepts, the reader will learn of practical tips required to achieve meaningful measurements, and will understand the relationship between these measurements and traditional, conventional DC characteristics.
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