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Determination of the Optical Bandgap...

Guerra Torres, Jorge Andres.

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Determination of the Optical Bandgap of Thin Amorphous (SiC)1-x (Ain)x Films Produced by Radio Frequency Dual Magnetron Sputtering.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Determination of the Optical Bandgap of Thin Amorphous (SiC)1-x (Ain)x Films Produced by Radio Frequency Dual Magnetron Sputtering./
Author:	Guerra Torres, Jorge Andres.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2010,
Description:	77 p.
Notes:	Source: Dissertations Abstracts International, Volume: 81-11.
Contained By:	Dissertations Abstracts International81-11.
Subject:	Optics. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27751706
ISBN:	9781392691250

Determination of the Optical Bandgap of Thin Amorphous (SiC)1-x (Ain)x Films Produced by Radio Frequency Dual Magnetron Sputtering.
Guerra Torres, Jorge Andres.

Determination of the Optical Bandgap of Thin Amorphous (SiC)1-x (Ain)x Films Produced by Radio Frequency Dual Magnetron Sputtering. - Ann Arbor : ProQuest Dissertations & Theses, 2010 - 77 p.

Source: Dissertations Abstracts International, Volume: 81-11.

Thesis (Master's)--Pontificia Universidad Catolica del Peru - CENTRUM Catolica (Peru), 2010.

This item must not be sold to any third party vendors.

Peliculas delgadas amorfas semiconductoras de amplio ancho de banda del compuesto pseudobinario (SiC)1-x(AlN)x fueron depositadas por pulverizacion por un sistema de dos magnetrones de radio frecuencia sobre CaF2, MgO, Al2O3 y vidrio. Con el fin de determinar el ancho de banda optico versus la composicion de la pelicula, se realizaron medidas espectroscopicas de la transmision de donde el indice de refraccion y el coeficiente de absorcion fueron calculados y medidas espectroscopicas de la dispersion de energia (EDS) de donde la composicion fue determinada. El ancho de banda optico es determinado para cada composicion a partir del coeficiente de absorcion de dos maneras distintas: segun el grafico de Tauc y utilizando el grafico de (αhν)2. la dependencia del ancho de banda con la composicion x puede ser descrita por la ley empirica de Vegard para aleaciones.

ISBN: 9781392691250Subjects--Topical Terms:

517925
Optics.
Subjects--Index Terms:

Amorphous wide bandgap semiconductor thin films

Determination of the Optical Bandgap of Thin Amorphous (SiC)1-x (Ain)x Films Produced by Radio Frequency Dual Magnetron Sputtering.
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245 1 0 $a Determination of the Optical Bandgap of Thin Amorphous (SiC)1-x (Ain)x Films Produced by Radio Frequency Dual Magnetron Sputtering.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2010
300 $a 77 p.
500 $a Source: Dissertations Abstracts International, Volume: 81-11.
500 $a Advisor: Weingartner, Roland.
502 $a Thesis (Master's)--Pontificia Universidad Catolica del Peru - CENTRUM Catolica (Peru), 2010.
506 $a This item must not be sold to any third party vendors.
520 $a Peliculas delgadas amorfas semiconductoras de amplio ancho de banda del compuesto pseudobinario (SiC)1-x(AlN)x fueron depositadas por pulverizacion por un sistema de dos magnetrones de radio frecuencia sobre CaF2, MgO, Al2O3 y vidrio. Con el fin de determinar el ancho de banda optico versus la composicion de la pelicula, se realizaron medidas espectroscopicas de la transmision de donde el indice de refraccion y el coeficiente de absorcion fueron calculados y medidas espectroscopicas de la dispersion de energia (EDS) de donde la composicion fue determinada. El ancho de banda optico es determinado para cada composicion a partir del coeficiente de absorcion de dos maneras distintas: segun el grafico de Tauc y utilizando el grafico de (αhν)2. la dependencia del ancho de banda con la composicion x puede ser descrita por la ley empirica de Vegard para aleaciones.
520 $a Amorphous wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1-x(AlN)x were grown by radio frequency dual magnetron sputtering on CaF2, MgO, Al2O3 and glass substrates. In order to determine the optical bandgap versus composition of the film we performed spectroscopic transmission measurements from where the refractive index and absorption coefficient were calculated, and energy dispersion spectroscopy (EDS) measurements from where the composition was determined. The optical bandgap is determined for each composition from the absorption coefficient in two different ways: according to the Tauc plot and using the (αhν) 2 plot. The dependence of the optical bandgap on the composition x can be described by Vegard's empirical law for alloys.
590 $a School code: 1618.
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653 $a Amorphous wide bandgap semiconductor thin films
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710 2 $a Pontificia Universidad Catolica del Peru - CENTRUM Catolica (Peru). $3 3278657
773 0 $t Dissertations Abstracts International $g 81-11.
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793 $a English
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27751706