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GaN-On-AlN as a Platform for High-Vo...

Bader, Samuel James.

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GaN-On-AlN as a Platform for High-Voltage Complementary Electronics.

Record Type:	Electronic resources : Monograph/item
Title/Author:	GaN-On-AlN as a Platform for High-Voltage Complementary Electronics./
Author:	Bader, Samuel James.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
Description:	259 p.
Notes:	Source: Dissertations Abstracts International, Volume: 81-12, Section: B.
Contained By:	Dissertations Abstracts International81-12B.
Subject:	Electrical engineering. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27959864
ISBN:	9798645499716

GaN-On-AlN as a Platform for High-Voltage Complementary Electronics.
Bader, Samuel James.

GaN-On-AlN as a Platform for High-Voltage Complementary Electronics. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 259 p.

Source: Dissertations Abstracts International, Volume: 81-12, Section: B.

Thesis (Ph.D.)--Cornell University, 2020.

This item is not available from ProQuest Dissertations & Theses.

The prospect of defining complementary logic monolithically in a wide-bandgap semiconductor such as Gallium Nitride, to manage the RF and power applications of an an energy-efficient and always-connected world, has attracted massive interest in recent years. This thesis introduces the subject with a tour of complementary logic outlooks in a range of wide-bandgap and heterogenous architectures. Then it zooms into GaN-on-AlN, the platform on which our team has been developing this possibility, and discusses mathematically the design of both n-channel and p-channel devices therein. Then the thesis demonstrates the first generation of recessed GaN/AlN p-channel devices that allowed this material system to stake its claim as a contender and discusses how to model such devices. With that flag in place, we then divert into more fundamental physics, providing a theoretical coverage of the transport possible in this high-quality platform. Finally, the thesis concludes with a set of devices acheiving current-levels in the same order of magnitude as many normally-off GaN HEMTs, a threshold which indicates that, finally, the dream of co-integration could offer true design value.

ISBN: 9798645499716Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Gallium nitride

GaN-On-AlN as a Platform for High-Voltage Complementary Electronics.
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245 1 0 $a GaN-On-AlN as a Platform for High-Voltage Complementary Electronics.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2020
300 $a 259 p.
500 $a Source: Dissertations Abstracts International, Volume: 81-12, Section: B.
500 $a Advisor: Jena, Debdeep.
502 $a Thesis (Ph.D.)--Cornell University, 2020.
506 $a This item is not available from ProQuest Dissertations & Theses.
506 $a This item must not be sold to any third party vendors.
520 $a The prospect of defining complementary logic monolithically in a wide-bandgap semiconductor such as Gallium Nitride, to manage the RF and power applications of an an energy-efficient and always-connected world, has attracted massive interest in recent years. This thesis introduces the subject with a tour of complementary logic outlooks in a range of wide-bandgap and heterogenous architectures. Then it zooms into GaN-on-AlN, the platform on which our team has been developing this possibility, and discusses mathematically the design of both n-channel and p-channel devices therein. Then the thesis demonstrates the first generation of recessed GaN/AlN p-channel devices that allowed this material system to stake its claim as a contender and discusses how to model such devices. With that flag in place, we then divert into more fundamental physics, providing a theoretical coverage of the transport possible in this high-quality platform. Finally, the thesis concludes with a set of devices acheiving current-levels in the same order of magnitude as many normally-off GaN HEMTs, a threshold which indicates that, finally, the dream of co-integration could offer true design value.
590 $a School code: 0058.
650 4 $a Electrical engineering. $3 649834
650 4 $a Applied physics. $3 3343996
653 $a Gallium nitride
653 $a Wide-bandgap semiconductor
690 $a 0544
690 $a 0215
710 2 $a Cornell University. $b Applied Physics. $3 3192645
773 0 $t Dissertations Abstracts International $g 81-12B.
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