語系:
繁體中文
English
說明(常見問題)
回圖書館首頁
手機版館藏查詢
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
Ultra Low Power Oven Controlled MEMS...
~
Kwon, Hyun Keun.
FindBook
Google Book
Amazon
博客來
Ultra Low Power Oven Controlled MEMS Resonator Timing Reference.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Ultra Low Power Oven Controlled MEMS Resonator Timing Reference./
作者:
Kwon, Hyun Keun.
出版者:
Ann Arbor : ProQuest Dissertations & Theses, : 2020,
面頁冊數:
112 p.
附註:
Source: Dissertations Abstracts International, Volume: 82-02, Section: B.
Contained By:
Dissertations Abstracts International82-02B.
標題:
Thermodynamics. -
電子資源:
https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28103982
ISBN:
9798662510494
Ultra Low Power Oven Controlled MEMS Resonator Timing Reference.
Kwon, Hyun Keun.
Ultra Low Power Oven Controlled MEMS Resonator Timing Reference.
- Ann Arbor : ProQuest Dissertations & Theses, 2020 - 112 p.
Source: Dissertations Abstracts International, Volume: 82-02, Section: B.
Thesis (Ph.D.)--Stanford University, 2020.
This item must not be sold to any third party vendors.
In all modern electronics, there is a timing reference or a clock within that outputs a specific frequency for various applications. These timing references are used for a wide variety varying from real-time clock (RTC), digital data communication to clocking digital circuits. The timing reference market has been mostly dominated by quartz crystal oscillators (XO). However, with the advancement of silicon microelectromechanical systems (MEMS) resonator technology, the viability for replacing the conventional quartz parts in the precision timing reference has grown drastically over the years. Silicon MEMS resonators can be fabricated with mature silicon IC technology, designed and packaged in a much smaller footprint and thus reduce the power consumption needed to ovenize the device for temperature compensation. The inherent disadvantage of the silicon MEMS based resonators come from its sensitivity to temperature, mainly from the temperature coefficient of elasticity (tcE). For uncompensated device, the resonator will exhibit a large drift in frequency (~ -30 parts-per-million (ppm)/C°). Several techniques to overcome such drift is addressed in this thesis along with other important pillars to achieve highly stable, robust, low-power MEMS resonators. First, the epi-seal fabrication platform provides long term stability against environmental factors. Using an etch-hole free process variant, a high frequency-quality (fxQ) factor was achieved. New process steps to include a top-bump-stop design allowed more robust design against large shocks. Moreover, a potential way to tuning the temperature coefficient of frequency by putting a thin film of epitaxial SiGe layer is explored. Second, with optimized device-level heater design, the resonator was ovenized to desired turnover temperature achieved by appropriate doping of the device layer. An ultra-low operation power consumption of 8mW was achieved with such ovenization scheme at -40 C° environment. Moreover, the stable ovenization was necessary for achieving state-of-the-art ±1.5 parts-per-billion (ppb) level temperature stability between -40 and 60 C°. Third, the oven-controlled MEMS resonator (OCMR) is further explored to overcome the challenges of using a high-frequency mode as the feedthrough signals grow with frequency. By using a 45-Degree orientation device, I was able to utilize the low frequency, high Q plate-bending mode as the output as it exhibited a turn-over point. Shock characterizations and phase noise improvements were conducted on these devices to study the fundamental limits of MEMS resonator timing references.
ISBN: 9798662510494Subjects--Topical Terms:
517304
Thermodynamics.
Subjects--Index Terms:
Temperature coefficient
Ultra Low Power Oven Controlled MEMS Resonator Timing Reference.
LDR
:03718nmm a2200337 4500
001
2280423
005
20210827095946.5
008
220723s2020 ||||||||||||||||| ||eng d
020
$a
9798662510494
035
$a
(MiAaPQ)AAI28103982
035
$a
(MiAaPQ)STANFORDqj713my3288
035
$a
AAI28103982
040
$a
MiAaPQ
$c
MiAaPQ
100
1
$a
Kwon, Hyun Keun.
$3
3558938
245
1 0
$a
Ultra Low Power Oven Controlled MEMS Resonator Timing Reference.
260
1
$a
Ann Arbor :
$b
ProQuest Dissertations & Theses,
$c
2020
300
$a
112 p.
500
$a
Source: Dissertations Abstracts International, Volume: 82-02, Section: B.
500
$a
Advisor: Kenny, Thomas;Howe, Roger;Solgaard, Olav.
502
$a
Thesis (Ph.D.)--Stanford University, 2020.
506
$a
This item must not be sold to any third party vendors.
520
$a
In all modern electronics, there is a timing reference or a clock within that outputs a specific frequency for various applications. These timing references are used for a wide variety varying from real-time clock (RTC), digital data communication to clocking digital circuits. The timing reference market has been mostly dominated by quartz crystal oscillators (XO). However, with the advancement of silicon microelectromechanical systems (MEMS) resonator technology, the viability for replacing the conventional quartz parts in the precision timing reference has grown drastically over the years. Silicon MEMS resonators can be fabricated with mature silicon IC technology, designed and packaged in a much smaller footprint and thus reduce the power consumption needed to ovenize the device for temperature compensation. The inherent disadvantage of the silicon MEMS based resonators come from its sensitivity to temperature, mainly from the temperature coefficient of elasticity (tcE). For uncompensated device, the resonator will exhibit a large drift in frequency (~ -30 parts-per-million (ppm)/C°). Several techniques to overcome such drift is addressed in this thesis along with other important pillars to achieve highly stable, robust, low-power MEMS resonators. First, the epi-seal fabrication platform provides long term stability against environmental factors. Using an etch-hole free process variant, a high frequency-quality (fxQ) factor was achieved. New process steps to include a top-bump-stop design allowed more robust design against large shocks. Moreover, a potential way to tuning the temperature coefficient of frequency by putting a thin film of epitaxial SiGe layer is explored. Second, with optimized device-level heater design, the resonator was ovenized to desired turnover temperature achieved by appropriate doping of the device layer. An ultra-low operation power consumption of 8mW was achieved with such ovenization scheme at -40 C° environment. Moreover, the stable ovenization was necessary for achieving state-of-the-art ±1.5 parts-per-billion (ppb) level temperature stability between -40 and 60 C°. Third, the oven-controlled MEMS resonator (OCMR) is further explored to overcome the challenges of using a high-frequency mode as the feedthrough signals grow with frequency. By using a 45-Degree orientation device, I was able to utilize the low frequency, high Q plate-bending mode as the output as it exhibited a turn-over point. Shock characterizations and phase noise improvements were conducted on these devices to study the fundamental limits of MEMS resonator timing references.
590
$a
School code: 0212.
650
4
$a
Thermodynamics.
$3
517304
650
4
$a
Electrical engineering.
$3
649834
650
4
$a
Mechanical engineering.
$3
649730
653
$a
Temperature coefficient
690
$a
0544
690
$a
0548
690
$a
0348
710
2
$a
Stanford University.
$3
754827
773
0
$t
Dissertations Abstracts International
$g
82-02B.
790
$a
0212
791
$a
Ph.D.
792
$a
2020
793
$a
English
856
4 0
$u
https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28103982
筆 0 讀者評論
館藏地:
全部
電子資源
出版年:
卷號:
館藏
1 筆 • 頁數 1 •
1
條碼號
典藏地名稱
館藏流通類別
資料類型
索書號
使用類型
借閱狀態
預約狀態
備註欄
附件
W9432156
電子資源
11.線上閱覽_V
電子書
EB
一般使用(Normal)
在架
0
1 筆 • 頁數 1 •
1
多媒體
評論
新增評論
分享你的心得
Export
取書館
處理中
...
變更密碼
登入