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High-Power CMOS SOI Switching and Ap...

Hill, Cameron W.

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High-Power CMOS SOI Switching and Applications in RF Signal Processing.

Record Type:	Electronic resources : Monograph/item
Title/Author:	High-Power CMOS SOI Switching and Applications in RF Signal Processing./
Author:	Hill, Cameron W.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
Description:	118 p.
Notes:	Source: Dissertations Abstracts International, Volume: 82-05, Section: B.
Contained By:	Dissertations Abstracts International82-05B.
Subject:	Electrical engineering. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28029985
ISBN:	9798684681622

High-Power CMOS SOI Switching and Applications in RF Signal Processing.
Hill, Cameron W.

High-Power CMOS SOI Switching and Applications in RF Signal Processing. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 118 p.

Source: Dissertations Abstracts International, Volume: 82-05, Section: B.

Thesis (Ph.D.)--University of California, Santa Barbara, 2020.

This item must not be sold to any third party vendors.

In-band full duplex (IBFD) for increased spectral efficiency but is limited by self-interference (SI) from the transmitter to the receiver. A combination of antenna-isolation, circulators, analog cancellation, and digital cancellation can achieve high levels of SI cancellation, but is still not enough to enable high-sensitivity IBFD operation. An additional layer of cancellation can be added in the code-domain. RF code-domain DSSS-CDMA approaches have been shown to add an additional 40-50 dB of SI cancellation. However, in order to make code-domain techniques compatible with other SI cancellation techniques, the interface must be RF-invisible and placed directly at the antenna interface. This requires RF-signal processing techniques in both the TX and RX paths of the tranceiver. This work focuses on the development of high-power, high modulation bandwidth switches in cost-effective CMOS SOI processes which enable the transmitter side of code-domain SI without interfering with other self-interference cancellation techniques. First, theory groundwork of trade-os between linearity, power-handling, and insertion loss in CMOS switches will be discussed. Then a variety of modulators based on this theory with fractional bandwidths (FBWs) approaching 50% and power handling of up to 40 dBm will be explained. Next, signal processing techniques to reduce unnecessary out-of-band (OOB) emissions will be given. Finally, the applications of these techniques in full-duplex systems, and further applications are discussed.

ISBN: 9798684681622Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

CMOS

High-Power CMOS SOI Switching and Applications in RF Signal Processing.
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300 $a 118 p.
500 $a Source: Dissertations Abstracts International, Volume: 82-05, Section: B.
500 $a Advisor: Buckwalter, James F.
502 $a Thesis (Ph.D.)--University of California, Santa Barbara, 2020.
506 $a This item must not be sold to any third party vendors.
520 $a In-band full duplex (IBFD) for increased spectral efficiency but is limited by self-interference (SI) from the transmitter to the receiver. A combination of antenna-isolation, circulators, analog cancellation, and digital cancellation can achieve high levels of SI cancellation, but is still not enough to enable high-sensitivity IBFD operation. An additional layer of cancellation can be added in the code-domain. RF code-domain DSSS-CDMA approaches have been shown to add an additional 40-50 dB of SI cancellation. However, in order to make code-domain techniques compatible with other SI cancellation techniques, the interface must be RF-invisible and placed directly at the antenna interface. This requires RF-signal processing techniques in both the TX and RX paths of the tranceiver. This work focuses on the development of high-power, high modulation bandwidth switches in cost-effective CMOS SOI processes which enable the transmitter side of code-domain SI without interfering with other self-interference cancellation techniques. First, theory groundwork of trade-os between linearity, power-handling, and insertion loss in CMOS switches will be discussed. Then a variety of modulators based on this theory with fractional bandwidths (FBWs) approaching 50% and power handling of up to 40 dBm will be explained. Next, signal processing techniques to reduce unnecessary out-of-band (OOB) emissions will be given. Finally, the applications of these techniques in full-duplex systems, and further applications are discussed.
590 $a School code: 0035.
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