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The Electronic Properties of the Qua...

Gilbert, Simeon James.

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The Electronic Properties of the Quasi-One-Dimensional Transition Metal Trichalcogenides: TiS3 and ZrS3.

Record Type:	Electronic resources : Monograph/item
Title/Author:	The Electronic Properties of the Quasi-One-Dimensional Transition Metal Trichalcogenides: TiS3 and ZrS3./
Author:	Gilbert, Simeon James.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
Description:	73 p.
Notes:	Source: Dissertations Abstracts International, Volume: 82-05, Section: B.
Contained By:	Dissertations Abstracts International82-05B.
Subject:	Physics. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28152902
ISBN:	9798691216930

The Electronic Properties of the Quasi-One-Dimensional Transition Metal Trichalcogenides: TiS3 and ZrS3.
Gilbert, Simeon James.

The Electronic Properties of the Quasi-One-Dimensional Transition Metal Trichalcogenides: TiS3 and ZrS3. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 73 p.

Source: Dissertations Abstracts International, Volume: 82-05, Section: B.

Thesis (Ph.D.)--The University of Nebraska - Lincoln, 2020.

This item must not be sold to any third party vendors.

The transition metal trichalcogenides are a class of materials formed by 1D chains of covalently bound MX3 (M=Ti, Zr, Hf, Ta, Nb; X=S, Se, Te) trigonal prisms which are held together by weak van der Waals forces to form 2D sheets. Because of their superior edge termination, these materials suppress edge scattering effects that plague other two-dimensional materials thus enabling devices scaling to widths below 10 nm. Furthermore, this quasi-one-dimensional structure results in highly anisotropic electronic and optical properties which were examined through angle resolved photoemission spectroscopy and scanning photocurrent microscopy. These measurements show that the hole carrier masses are drastically altered along different in-plane crystallographic directions and that the photocurrent production in these materials is strongly dependent on the polarization of the exciting light. Angle resolved photoemission spectroscopy and X-ray absorption spectroscopy indicate that TiS3 and ZrS3 exhibit strong metal-sulfur hybridization within both the conduction and valence bands. A combination of X-ray photoemission spectroscopy and device measurements were utilized to show that strong bonding with the surface sulfur atoms in TiS3 prevents Schottky barrier formation with Au and Pt metal contacts. Furthermore, there are indications from both scanning photocurrent microscopy and X-ray magnetic circular dichroism measurements that these materials can support symmetry protected spin-polarized currents which could be utilized to create spintronic devices. When these findings are combined with the transition metal trichalcogenides' superior edge termination, it becomes clear that these materials are promising for various applications in the fields of nanoelectronics, optoelectronics, and spintronics.

ISBN: 9798691216930Subjects--Topical Terms:

516296
Physics.
Subjects--Index Terms:

2D materials

The Electronic Properties of the Quasi-One-Dimensional Transition Metal Trichalcogenides: TiS3 and ZrS3.
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500 $a Source: Dissertations Abstracts International, Volume: 82-05, Section: B.
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506 $a This item must not be sold to any third party vendors.
520 $a The transition metal trichalcogenides are a class of materials formed by 1D chains of covalently bound MX3 (M=Ti, Zr, Hf, Ta, Nb; X=S, Se, Te) trigonal prisms which are held together by weak van der Waals forces to form 2D sheets. Because of their superior edge termination, these materials suppress edge scattering effects that plague other two-dimensional materials thus enabling devices scaling to widths below 10 nm. Furthermore, this quasi-one-dimensional structure results in highly anisotropic electronic and optical properties which were examined through angle resolved photoemission spectroscopy and scanning photocurrent microscopy. These measurements show that the hole carrier masses are drastically altered along different in-plane crystallographic directions and that the photocurrent production in these materials is strongly dependent on the polarization of the exciting light. Angle resolved photoemission spectroscopy and X-ray absorption spectroscopy indicate that TiS3 and ZrS3 exhibit strong metal-sulfur hybridization within both the conduction and valence bands. A combination of X-ray photoemission spectroscopy and device measurements were utilized to show that strong bonding with the surface sulfur atoms in TiS3 prevents Schottky barrier formation with Au and Pt metal contacts. Furthermore, there are indications from both scanning photocurrent microscopy and X-ray magnetic circular dichroism measurements that these materials can support symmetry protected spin-polarized currents which could be utilized to create spintronic devices. When these findings are combined with the transition metal trichalcogenides' superior edge termination, it becomes clear that these materials are promising for various applications in the fields of nanoelectronics, optoelectronics, and spintronics.
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