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Near infrared detectors based on sil...

Montero Alvarez, Daniel.

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Near infrared detectors based on silicon supersaturated with transition metals

Record Type:	Electronic resources : Monograph/item
Title/Author:	Near infrared detectors based on silicon supersaturated with transition metals/ by Daniel Montero Alvarez.
Author:	Montero Alvarez, Daniel.
Published:	Cham :Springer International Publishing : : 2021.,
Description:	xxxvi, 230 p. :ill., digital ;24 cm.
[NT 15003449]:	Introduction -- Experimental techniques -- Results: NLA using a short pulse duration KrF laser -- Results: NLA using a long pulse duration XeCl laser -- Results: Integrating the supersaturated material in a CMOS pixel matrix.
Contained By:	Springer Nature eBook
Subject:	Infrared detectors - Materials. -
Online resource:	https://doi.org/10.1007/978-3-030-63826-9
ISBN:	9783030638269

Near infrared detectors based on silicon supersaturated with transition metals
Montero Alvarez, Daniel.

Near infrared detectors based on silicon supersaturated with transition metals[electronic resource] /by Daniel Montero Alvarez. - Cham :Springer International Publishing :2021. - xxxvi, 230 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Introduction -- Experimental techniques -- Results: NLA using a short pulse duration KrF laser -- Results: NLA using a long pulse duration XeCl laser -- Results: Integrating the supersaturated material in a CMOS pixel matrix.

This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.

ISBN: 9783030638269

Standard No.: 10.1007/978-3-030-63826-9doiSubjects--Topical Terms:

1639574
Infrared detectors
--Materials.

LC Class. No.: TA1570 / .M668 2021

Dewey Class. No.: 621.362

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