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Gallium oxide = materials properties...

Higashiwaki, Masataka.

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Gallium oxide = materials properties, crystal growth, and devices /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Gallium oxide/ edited by Masataka Higashiwaki, Shizuo Fujita.
Reminder of title:	materials properties, crystal growth, and devices /
other author:	Higashiwaki, Masataka.
Published:	Cham :Springer International Publishing : : 2020.,
Description:	xxviii, 764 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
Subject:	Gallium. -
Online resource:	https://doi.org/10.1007/978-3-030-37153-1
ISBN:	9783030371531

Gallium oxide = materials properties, crystal growth, and devices /
Gallium oxidematerials properties, crystal growth, and devices /[electronic resource] :edited by Masataka Higashiwaki, Shizuo Fujita. - Cham :Springer International Publishing :2020. - xxviii, 764 p. :ill., digital ;24 cm. - Springer series in materials science,v.2930933-033X ;. - Springer series in materials science ;v.293..

This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3) Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.

ISBN: 9783030371531

Standard No.: 10.1007/978-3-030-37153-1doiSubjects--Topical Terms:

3450866
Gallium.

LC Class. No.: QD181.G2 / G355 2020

Dewey Class. No.: 546.675

Gallium oxide = materials properties, crystal growth, and devices /
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245 0 0 $a Gallium oxide $h [electronic resource] : $b materials properties, crystal growth, and devices / $c edited by Masataka Higashiwaki, Shizuo Fujita.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2020.
300 $a xxviii, 764 p. : $b ill., digital ; $c 24 cm.
490 1 $a Springer series in materials science, $x 0933-033X ; $v v.293
520 $a This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3) Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.
650 0 $a Gallium. $3 3450866
650 0 $a Semiconductors $x Materials. $3 553292
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650 2 4 $a Semiconductors. $3 516162
650 2 4 $a Electrical Engineering. $3 1001838
650 2 4 $a Optics, Lasers, Photonics, Optical Devices. $3 2209850
650 2 4 $a Surface and Interface Science, Thin Films. $3 1244633
650 2 4 $a Surfaces and Interfaces, Thin Films. $3 892408
700 1 $a Higashiwaki, Masataka. $3 3450863
700 1 $a Fujita, Shizuo. $3 3450864
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