氮化鎵薄膜成長於化學氣相沉積二硫化鉬之製程參數最佳化 = = Optim...
簡育琪

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  • 氮化鎵薄膜成長於化學氣相沉積二硫化鉬之製程參數最佳化 = = Optimization of gallium nitride thin films grown on chemical-vapor-deposited molybdenum disulfide /
  • Record Type: Language materials, printed : Monograph/item
    Title/Author: 氮化鎵薄膜成長於化學氣相沉積二硫化鉬之製程參數最佳化 =/ 簡育琪撰
    Reminder of title: Optimization of gallium nitride thin films grown on chemical-vapor-deposited molybdenum disulfide /
    remainder title: Optimization of Gallium Nitride Thin Films Grown on Chemical-Vapor-Deposited Molybdenum Disulfide
    Author: 簡育琪
    other author: 余英松
    Published: [花蓮縣] :[國立東華大學材料科學與工程學系], : 2020,
    Description: [18],104面 :圖,表 ;30公分
    Notes: 校內電子全文開放日期 2020/07/27
    Subject: 化學氣相沉積法 -
    Online resource: http://134.208.29.108/cgi-bin/gs32/gsweb.cgi?o=dstdcdr&s=G0610722015.id&searchmode=basic電子全文(依作者授權而定)
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GE0187420 五樓論文區 (5F Theses & Dissertations) 03.不外借_N 本校碩士論文 T 440.3 8801 2020 一般使用(Normal) On shelf 0
  • 1 records • Pages 1 •
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