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Semiconductor power devices = physic...

Lutz, Josef.

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Semiconductor power devices = physics, characteristics, reliability /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Semiconductor power devices/ by Josef Lutz ... [et al.].
Reminder of title:	physics, characteristics, reliability /
other author:	Lutz, Josef.
Published:	Cham :Springer International Publishing : : 2018.,
Description:	xix, 714 p. :ill., digital ;24 cm.
[NT 15003449]:	Power Semiconductor Devices - Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn-Junctions -- Short Introduction to Power Device Technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device-Induced Oscillations and Electromagnetic Disturbances -- Power Electronic System Integration.
Contained By:	Springer eBooks
Subject:	Power semiconductors. -
Online resource:	http://dx.doi.org/10.1007/978-3-319-70917-8
ISBN:	9783319709178

Semiconductor power devices = physics, characteristics, reliability /
Semiconductor power devicesphysics, characteristics, reliability /[electronic resource] :by Josef Lutz ... [et al.]. - 2nd ed. - Cham :Springer International Publishing :2018. - xix, 714 p. :ill., digital ;24 cm.

Power Semiconductor Devices - Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn-Junctions -- Short Introduction to Power Device Technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device-Induced Oscillations and Electromagnetic Disturbances -- Power Electronic System Integration.

This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.

ISBN: 9783319709178

Standard No.: 10.1007/978-3-319-70917-8doiSubjects--Topical Terms:

1047981
Power semiconductors.

LC Class. No.: TK7871.85

Dewey Class. No.: 621.38152

Semiconductor power devices = physics, characteristics, reliability /
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245 0 0 $a Semiconductor power devices $h [electronic resource] : $b physics, characteristics, reliability / $c by Josef Lutz ... [et al.].
250 $a 2nd ed.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2018.
300 $a xix, 714 p. : $b ill., digital ; $c 24 cm.
505 0 $a Power Semiconductor Devices - Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn-Junctions -- Short Introduction to Power Device Technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device-Induced Oscillations and Electromagnetic Disturbances -- Power Electronic System Integration.
520 $a This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
650 0 $a Power semiconductors. $3 1047981
650 1 4 $a Engineering. $3 586835
650 2 4 $a Circuits and Systems. $3 896527
650 2 4 $a Power Electronics, Electrical Machines and Networks. $3 1001796
650 2 4 $a Energy Systems. $3 1530445
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 893838
700 1 $a Lutz, Josef. $3 1532243
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer eBooks
856 4 0 $u http://dx.doi.org/10.1007/978-3-319-70917-8
950 $a Engineering (Springer-11647)