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Graphene-semiconductor heterojunctio...

Ou, Tzu-Min.

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Graphene-semiconductor heterojunctions and devices.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Graphene-semiconductor heterojunctions and devices./
作者:	Ou, Tzu-Min.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2015,
面頁冊數:	138 p.
附註:	Source: Dissertation Abstracts International, Volume: 77-05(E), Section: B.
Contained By:	Dissertation Abstracts International77-05B(E).
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3743643
ISBN:	9781339363899

Graphene-semiconductor heterojunctions and devices.
Ou, Tzu-Min.

Graphene-semiconductor heterojunctions and devices. - Ann Arbor : ProQuest Dissertations & Theses, 2015 - 138 p.

Source: Dissertation Abstracts International, Volume: 77-05(E), Section: B.

Thesis (Ph.D.)--University of Colorado at Boulder, 2015.

In this thesis we explore the potential of versatile graphene-semiconductor heterojunctions in photodetection and field-effect transistor (FET) applications. The first part of the thesis studies near-infrared photodiode (NIR PD) based on a graphene-n-Si heterojunction in which graphene is used as the absorbing medium. Graphene is chosen for its absorption in NIR wavelengths to which Si is not responsive. Most graphene detectors in the literature are photoconductors that have a high dark current. The graphene-Si heterojunction PD has a large Schottky barrier height that suppresses the dark current and enhances the current rectification and the photon detectivity.

ISBN: 9781339363899Subjects--Topical Terms:

649834
Electrical engineering.

Graphene-semiconductor heterojunctions and devices.
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245 1 0 $a Graphene-semiconductor heterojunctions and devices.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2015
300 $a 138 p.
500 $a Source: Dissertation Abstracts International, Volume: 77-05(E), Section: B.
500 $a Adviser: Bart Van Zeghbroeck.
502 $a Thesis (Ph.D.)--University of Colorado at Boulder, 2015.
520 $a In this thesis we explore the potential of versatile graphene-semiconductor heterojunctions in photodetection and field-effect transistor (FET) applications. The first part of the thesis studies near-infrared photodiode (NIR PD) based on a graphene-n-Si heterojunction in which graphene is used as the absorbing medium. Graphene is chosen for its absorption in NIR wavelengths to which Si is not responsive. Most graphene detectors in the literature are photoconductors that have a high dark current. The graphene-Si heterojunction PD has a large Schottky barrier height that suppresses the dark current and enhances the current rectification and the photon detectivity.
520 $a The fabricated graphene-Si heterojunction PD under conventional telecommunication 1.3 (1.5)-um illumination exhibits a responsivity of 3 (0.2) mA/W, an internal quantum efficiency of 14 (0.6) %, a noise-equivalent power of 1.5 (30) pW/Hz 0.5, and a specific detectivity of 3 (0.1)x109 cmHz0.5/W. An unexpected tunnel oxide is observed at the graphene-Si interface, further reducing the dark current. The performance in terms of sensitivity and noise is comparable to the commercially available discrete germanium NIR PDs due to its low dark current density on the order of 10 fA/microm 2. The Si CMOS-compatible PD based on graphene-Si heterojunction provides a promising route to realize a critical component for monolithically integrated Si photonic interconnects.
520 $a The second part of the thesis focuses on a novel graphene junction FET (GJFET) gated by a graphene-semiconductor heterojunction. The majority of graphene transistors in the literature---including MOSFETs, barristors, and tunneling FETs---have a heavily-doped Si back gate separated from the graphene channel by a conventional or high-K dielectric layer. The threshold voltage of individual transistors cannot be tuned easily in such designs, and have an additional problem with shorted back gates. In GJFETs, a Schottky junction is formed as graphene is placed on a semiconductor, resulting in a depletion region inside the semiconductor that induces a complementary charge in the graphene. Changing the reverse bias across the graphene-semiconductor junction modulates the depletion region width and thereby changes the total charge in graphene. The charge density of the graphene is also modulated by the doping density of the semiconductor substrate. The GJFET structure provides a solution for Dirac voltage tuning and back gate isolation by location-specific doping on a single device wafer.
520 $a A detailed understanding of the device is obtained through the design, fabrication, and analysis of GJFETs with atmospheric pressure chemical-vapor deposited graphene on n-type Si and 4H-SiC substrates of various doping densities. A variable depletion width model is built to numerically simulate the performance. A representative n-Si (4.5x10 15 cm-3) GJFET exhibits an on-off ratio of 3.8, an intrinsic hole density of 8x1011 cm-2, and a Dirac voltage of 14.1 V. Fitting the transfer characteristic of the Si GJFET with our device model yields an electron and hole mobility of 300 and 1300 cm2/Vs respectively. The tunability of the threshold voltage by varying the substrate doping density is also demonstrated. With an increasing substrate doping from 8x1014 to 2x10 16 cm-3, the threshold of the Si GJFET decreases from 24.9 V to 3.8 V. With even higher doping density (5x1018 cm-3) in n+4H-SiC, the Dirac voltage of the GJFET is further reduced to 1.5 V. These results also demonstrate the feasibility of integrating GJFET with semiconductor substrates other than Si, widening their potential for use in high-frequency electronics.
590 $a School code: 0051.
650 4 $a Electrical engineering. $3 649834
650 4 $a Nanotechnology. $3 526235
650 4 $a Optics. $3 517925
690 $a 0544
690 $a 0652
690 $a 0752
710 2 $a University of Colorado at Boulder. $b Electrical Engineering. $3 1025672
773 0 $t Dissertation Abstracts International $g 77-05B(E).
790 $a 0051
791 $a Ph.D.
792 $a 2015
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3743643