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Interface study of spiro-ometad on p...

Nguyen, Li Chan.

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Interface study of spiro-ometad on passivated p-, n-, and n +-Si(111) for use in tandem perovskite/silicon solar cell devices.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Interface study of spiro-ometad on passivated p-, n-, and n +-Si(111) for use in tandem perovskite/silicon solar cell devices./
Author:	Nguyen, Li Chan.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2015,
Description:	55 p.
Notes:	Source: Masters Abstracts International, Volume: 55-01.
Contained By:	Masters Abstracts International55-01(E).
Subject:	Physical chemistry. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1598066
ISBN:	9781339022888

Interface study of spiro-ometad on passivated p-, n-, and n +-Si(111) for use in tandem perovskite/silicon solar cell devices.
Nguyen, Li Chan.

Interface study of spiro-ometad on passivated p-, n-, and n +-Si(111) for use in tandem perovskite/silicon solar cell devices. - Ann Arbor : ProQuest Dissertations & Theses, 2015 - 55 p.

Source: Masters Abstracts International, Volume: 55-01.

Thesis (M.S.)--The University of North Carolina at Charlotte, 2015.

This item is not available from ProQuest Dissertations & Theses.

The organic semiconductor 2,2',7,7'-tetrakis-(N,N-di- p-methoxyphenylamine)9,9'-spirobifluorene (Spiro-OMeTAD) contact properties are studied on p-, n-, and n+-type silicon. Spiro-OMeTAD is a solid state hole conductor that has notably been used in perovskite solar cells achieving 20.1% efficiency. In this work spiro-OMeTAD doped with 20 mol% bis(trifluoromethane)sulfonimide lithium salt (Li-TFSI) is investigated as a spin and drop cast film on p, n, and n+-Si(111) surfaces terminated with H and CH3. An ohmic like tunnel junction has been observed on CH3- terminated p-, n-, and n+-Si(111) and also H-terminated p and n+-Si(111). Rectifying contacts have been found on n type H-terminated silicon. Low contact resistances have been found when the doped hole transport material contacts n+-Si(CH3) which has been found to be as low as 0.622 O·cm2 +/- 0.439 O·cm2. Other types of methyl-terminated silicon have been found to have contact resistances of 22.92 kO·cm 2 -54.34 kO·cm2 for n-Si and 0.51 kO·cm 2 - 3.12 kO·cm2 on p-Si (111) surfaces. H-terminated data for n+-Si(111) has been found to be as low as 1.34 +/- 0.54 kO·cm 2 and 1.3 +/- 0.28 kO·cm2 for p-Si(111). A photo-responsive CH3NH3PbIxCl3-x perovskite solar cell was fabricated utilizing n+-Si(CH3) as an anode and a 20 mol% Li-TFSI doped spiro-OMeTAD which resulted in <1% photoconversion efficiency. The 'pre-doped' spiro(TFSI)2 dicationic salt was used as an alternative to the uncontrollable air doping method from a spin cast film resulting in a contact resistance of 12 - 201 O·cm2.

ISBN: 9781339022888Subjects--Topical Terms:

1981412
Physical chemistry.

Interface study of spiro-ometad on passivated p-, n-, and n +-Si(111) for use in tandem perovskite/silicon solar cell devices.
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245 1 0 $a Interface study of spiro-ometad on passivated p-, n-, and n +-Si(111) for use in tandem perovskite/silicon solar cell devices.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2015
300 $a 55 p.
500 $a Source: Masters Abstracts International, Volume: 55-01.
500 $a Adviser: Michael G. Walter.
502 $a Thesis (M.S.)--The University of North Carolina at Charlotte, 2015.
506 $a This item is not available from ProQuest Dissertations & Theses.
520 $a The organic semiconductor 2,2',7,7'-tetrakis-(N,N-di- p-methoxyphenylamine)9,9'-spirobifluorene (Spiro-OMeTAD) contact properties are studied on p-, n-, and n+-type silicon. Spiro-OMeTAD is a solid state hole conductor that has notably been used in perovskite solar cells achieving 20.1% efficiency. In this work spiro-OMeTAD doped with 20 mol% bis(trifluoromethane)sulfonimide lithium salt (Li-TFSI) is investigated as a spin and drop cast film on p, n, and n+-Si(111) surfaces terminated with H and CH3. An ohmic like tunnel junction has been observed on CH3- terminated p-, n-, and n+-Si(111) and also H-terminated p and n+-Si(111). Rectifying contacts have been found on n type H-terminated silicon. Low contact resistances have been found when the doped hole transport material contacts n+-Si(CH3) which has been found to be as low as 0.622 O·cm2 +/- 0.439 O·cm2. Other types of methyl-terminated silicon have been found to have contact resistances of 22.92 kO·cm 2 -54.34 kO·cm2 for n-Si and 0.51 kO·cm 2 - 3.12 kO·cm2 on p-Si (111) surfaces. H-terminated data for n+-Si(111) has been found to be as low as 1.34 +/- 0.54 kO·cm 2 and 1.3 +/- 0.28 kO·cm2 for p-Si(111). A photo-responsive CH3NH3PbIxCl3-x perovskite solar cell was fabricated utilizing n+-Si(CH3) as an anode and a 20 mol% Li-TFSI doped spiro-OMeTAD which resulted in <1% photoconversion efficiency. The 'pre-doped' spiro(TFSI)2 dicationic salt was used as an alternative to the uncontrollable air doping method from a spin cast film resulting in a contact resistance of 12 - 201 O·cm2.
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