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Thin-Film Transistors Fabricated Usi...

Xiao, Nan.

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Thin-Film Transistors Fabricated Using Sputter Deposition of Zinc Oxide.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Thin-Film Transistors Fabricated Using Sputter Deposition of Zinc Oxide./
作者:	Xiao, Nan.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2013,
面頁冊數:	68 p.
附註:	Source: Masters Abstracts International, Volume: 51-05.
Contained By:	Masters Abstracts International51-05(E).
標題:	Electrical engineering. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1535323
ISBN:	9781267998675

Thin-Film Transistors Fabricated Using Sputter Deposition of Zinc Oxide.
Xiao, Nan.

Thin-Film Transistors Fabricated Using Sputter Deposition of Zinc Oxide. - Ann Arbor : ProQuest Dissertations & Theses, 2013 - 68 p.

Source: Masters Abstracts International, Volume: 51-05.

Thesis (M.S.)--Rochester Institute of Technology, 2013.

Development of thin film transistors (TFTs) with conventional channel layer materials, such as amorphous silicon (a-Si) and polysilicon (poly-Si), has been extensively investigated. A-Si TFT currently serves the large flat panel industry; however advanced display products are demanding better TFT performance because of the associated low electron mobility of a-Si. This has motivated interest in semiconducting metal oxides, such as Zinc Oxide (ZnO), for TFT backplanes.

ISBN: 9781267998675Subjects--Topical Terms:

649834
Electrical engineering.

Thin-Film Transistors Fabricated Using Sputter Deposition of Zinc Oxide.
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500 $a Adviser: Karl Hirschman.
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520 $a Development of thin film transistors (TFTs) with conventional channel layer materials, such as amorphous silicon (a-Si) and polysilicon (poly-Si), has been extensively investigated. A-Si TFT currently serves the large flat panel industry; however advanced display products are demanding better TFT performance because of the associated low electron mobility of a-Si. This has motivated interest in semiconducting metal oxides, such as Zinc Oxide (ZnO), for TFT backplanes.
520 $a This work involves the fabrication and characterization of TFTs using ZnO deposited by sputtering. An overview of the process details and results from recently fabricated TFTs following a full-factorial designed experiment will be presented. Material characterization and analysis of electrical results will be described. The investigated process variables were the gate dielectric and ZnO sputtering process parameters including power density and oxygen partial pressure. Electrical results showed clear differences in treatment combinations, with certain I-V characteristics demonstrating superior performance to preliminary work. A study of device stability will also be discussed.
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