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Understanding the synthesis, perform...

Flynn, Cory James.

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Understanding the synthesis, performance, and passivation of metal oxide photocathodes.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Understanding the synthesis, performance, and passivation of metal oxide photocathodes./
Author:	Flynn, Cory James.
Description:	154 p.
Notes:	Source: Dissertation Abstracts International, Volume: 77-11(E), Section: B.
Contained By:	Dissertation Abstracts International77-11B(E).
Subject:	Physical chemistry. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10119909
ISBN:	9781339811000

Understanding the synthesis, performance, and passivation of metal oxide photocathodes.
Flynn, Cory James.

Understanding the synthesis, performance, and passivation of metal oxide photocathodes. - 154 p.

Source: Dissertation Abstracts International, Volume: 77-11(E), Section: B.

Thesis (Ph.D.)--The University of North Carolina at Chapel Hill, 2016.

Metal oxides are ubiquitous in semiconductor technologies for their ease of synthesis, chemical stability, and tunable optical/electronic properties. These properties are especially important to fabricating efficient photoelectrodes for solar-energy applications. To counter inherent problems in these materials, new strategies were developed and successfully implemented on the widely-utilized p-type semiconductor, NiO.

ISBN: 9781339811000Subjects--Topical Terms:

1981412
Physical chemistry.

Understanding the synthesis, performance, and passivation of metal oxide photocathodes.
LDR:03149nmm a2200313 4500 001 2114879
005 20161128141932.5
008 180830s2016 ||||||||||||||||| ||eng d
020 $a 9781339811000
035 $a (MiAaPQ)AAI10119909
035 $a AAI10119909
040 $a MiAaPQ $c MiAaPQ
100 1 $a Flynn, Cory James. $3 3276494
245 1 0 $a Understanding the synthesis, performance, and passivation of metal oxide photocathodes.
300 $a 154 p.
500 $a Source: Dissertation Abstracts International, Volume: 77-11(E), Section: B.
500 $a Adviser: James F. Cahoon.
502 $a Thesis (Ph.D.)--The University of North Carolina at Chapel Hill, 2016.
520 $a Metal oxides are ubiquitous in semiconductor technologies for their ease of synthesis, chemical stability, and tunable optical/electronic properties. These properties are especially important to fabricating efficient photoelectrodes for solar-energy applications. To counter inherent problems in these materials, new strategies were developed and successfully implemented on the widely-utilized p-type semiconductor, NiO.
520 $a As the size of semiconductor materials shrink, the surface-to-volume ratio increases and surface defects dominate the performance of the materials. Surface defects can alter the optical and electronic characteristics of materials by changing the Fermi level, charge-carrier mobility, and surface reactivity. We first present a strategy to increase the electrical mobility of mesoporous metal oxide electrode materials by optimizing shape morphology. Transitioning from nanospheres to hexagonal nanoplatelets increased the charge-carrier mobility by one order of magnitude.
520 $a We then employed this improved material with a new vapor-phase deposition method termed targeted atomic deposition (TAD) to selectively passivate defect sites in semiconductor nanomaterials. We demonstrated the capabilities of this passivation method by applying a TAD of aluminum onto NiO. By exploiting a temperature-dependent deposition process, we selectively passivated the highly reactive sites in NiO: oxygen dangling bonds associated with Ni vacancies. The TAD treatment completely passivated all measurable surface defects, optically bleached the material, and significantly improved all photovoltaic performance metrics in dye-sensitized solar cells. The technique was proven to be generic to numerous forms of NiO.
520 $a While the implementation of TAD of Al was successful, the process involved pulsing two precursors to passivate the material. Ideally, the TAD process should require only a single precursor and continuous exposure. We utilized a continuous flow of diborane to perform a TAD of B onto NiO. The TAD process was successfully implemented in a simplified manner. The treatment moderately increased DSSC performance and proved viability with a different vapor-phase precursor.
590 $a School code: 0153.
650 4 $a Physical chemistry. $3 1981412
650 4 $a Materials science. $3 543314
690 $a 0494
690 $a 0794
710 2 $a The University of North Carolina at Chapel Hill. $b Chemistry. $3 1021872
773 0 $t Dissertation Abstracts International $g 77-11B(E).
790 $a 0153
791 $a Ph.D.
792 $a 2016
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10119909