東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Solution-Processed Indium Oxide Base...

Xu, Wangying.

Linked to FindBook

Google Book

Amazon

博客來

Solution-Processed Indium Oxide Based Thin-Film Transistors.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Solution-Processed Indium Oxide Based Thin-Film Transistors./
Author:	Xu, Wangying.
Description:	193 p.
Notes:	Source: Dissertation Abstracts International, Volume: 77-07(E), Section: B.
Contained By:	Dissertation Abstracts International77-07B(E).
Subject:	Nanotechnology. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10024925
ISBN:	9781339519487

Solution-Processed Indium Oxide Based Thin-Film Transistors.
Xu, Wangying.

Solution-Processed Indium Oxide Based Thin-Film Transistors. - 193 p.

Source: Dissertation Abstracts International, Volume: 77-07(E), Section: B.

Thesis (Ph.D.)--The Chinese University of Hong Kong (Hong Kong), 2015.

Oxide thin-film transistors (TFTs) have attracted considerable attention over the past decade due to their high carrier mobility and excellent uniformity. However, most of these oxide TFTs are usually fabricated using costly vacuum-based techniques. Recently, the solution processes have been developed due to the possibility of low-cost and large-area fabrication. In this thesis, we have carried out a detailed and systematic study of solution-processed oxide thin films and TFTs.

ISBN: 9781339519487Subjects--Topical Terms:

526235
Nanotechnology.

Solution-Processed Indium Oxide Based Thin-Film Transistors.
LDR:03488nmm a2200337 4500 001 2079311
005 20170313112128.5
008 170521s2015 ||||||||||||||||| ||eng d
020 $a 9781339519487
035 $a (MiAaPQ)AAI10024925
035 $a AAI10024925
040 $a MiAaPQ $c MiAaPQ
100 1 $a Xu, Wangying. $3 3194980
245 1 0 $a Solution-Processed Indium Oxide Based Thin-Film Transistors.
300 $a 193 p.
500 $a Source: Dissertation Abstracts International, Volume: 77-07(E), Section: B.
500 $a Adviser: J. B. Xu.
502 $a Thesis (Ph.D.)--The Chinese University of Hong Kong (Hong Kong), 2015.
520 $a Oxide thin-film transistors (TFTs) have attracted considerable attention over the past decade due to their high carrier mobility and excellent uniformity. However, most of these oxide TFTs are usually fabricated using costly vacuum-based techniques. Recently, the solution processes have been developed due to the possibility of low-cost and large-area fabrication. In this thesis, we have carried out a detailed and systematic study of solution-processed oxide thin films and TFTs.
520 $a At first, we demonstrated a passivation method to overcome the water susceptibility of solution-processed InZnO TFTs by utilizing octadecylphosphonic acid (ODPA) self-assembled monolayers (SAMs). The unpassivated InZnO TFTs exhibited large hysteresis in their electrical characteristics due to the adsorbed water at the semiconductor surface. Formation of a SAM of ODPA on the top of InZnO removed water molecules weakly absorbed at the back channel and prevented water diffusion from the surroundings. Therefore the passivated devices exhibited significantly reduced hysteretic characteristics.
520 $a Secondly, we developed a simple spin-coating approach for high- k dielectrics (Al2O3, ZrO2, Y 2O3 and TiO2). These materials were used as gate dielectrics for solution-processed In2O3 or InZnO TFTs. Among the high-k dielectrics, the Al2O3-based devices showed the best performance, which is attributed to the smooth dielectric/semiconductor interface and the low interface trap density besides its good insulating property.
520 $a Thirdly, the formation and properties of Al2O3 thin films under various annealing temperatures were intensively studied, revealing that the sol-gel-derived Al2O3 thin film undergoes the decomposition of organic residuals and nitrate groups, as well as conversion of aluminum hydroxides to form aluminum oxide. Besides, the Al2O 3 film was used as gate dielectric for solution-processed oxide TFTs, resulting in high mobility and low operating voltage.
520 $a Finally, we proposed a green route for solution-processed oxide TFTs using water as solvent. The formation and properties of the aqueous solution-based Al2O3, Ga2O3, In2O 3 and InZnO thin films were intensively investigated by a range of complementary characterization techniques. Besides, the aqueous solution-processed In 2O3/Al2O3, InZnO/Al2O 3 and In2O3/Ga2O3 TFTs under various annealing temperatures were studied in detail. Our study represents a significant step towards the development of low-cost, low-temperature, and low voltage driven green oxide electronics.
590 $a School code: 1307.
650 4 $a Nanotechnology. $3 526235
650 4 $a Materials science. $3 543314
650 4 $a Nanoscience. $3 587832
690 $a 0652
690 $a 0794
690 $a 0565
710 2 $a The Chinese University of Hong Kong (Hong Kong). $3 1017547
773 0 $t Dissertation Abstracts International $g 77-07B(E).
790 $a 1307
791 $a Ph.D.
792 $a 2015
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10024925