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Gunn Effect in Heterostructure-Based...

Chen, Rui.

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Gunn Effect in Heterostructure-Based Semiconductor Nanoconstrictions and its Application to THz Sensing.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Gunn Effect in Heterostructure-Based Semiconductor Nanoconstrictions and its Application to THz Sensing./
Author:	Chen, Rui.
Description:	156 p.
Notes:	Source: Dissertation Abstracts International, Volume: 76-07(E), Section: B.
Contained By:	Dissertation Abstracts International76-07B(E).
Subject:	Electrical engineering. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3683016
ISBN:	9781321569193

Gunn Effect in Heterostructure-Based Semiconductor Nanoconstrictions and its Application to THz Sensing.
Chen, Rui.

Gunn Effect in Heterostructure-Based Semiconductor Nanoconstrictions and its Application to THz Sensing. - 156 p.

Source: Dissertation Abstracts International, Volume: 76-07(E), Section: B.

Thesis (Ph.D.)--State University of New York at Buffalo, 2015.

The subject of this thesis is the exploration of the Gunn effect in novel semiconductor nanoconstrictions (NCs). While the Gunn effect has long been exploited as a means to realize versatile solid-state microwave sources, recent interest in this phenomenon has focused on its potential use in terahertz (THz) sources and detectors. In this thesis, we present experimental evidence for the Gunn effect in GaAs-based NCs, fabricated utilizing advanced nanofabrication techniques. Our studies reveal that the nonequilibrium current-voltage characteristics of these devices exhibit several distinct features that are collectively consistent with this phenomenon. These include current saturation arising from velocity overshoot, strongly-enhanced current instabilities due to impact ionization within high-field domains, and pronounced hysteresis accompanied by electroluminescence. Theoretical modeling indicates that the onset of the Gunn behavior is triggered by the full development of drain-induced barrier lowering (DIBL), which allows for the injection of high-energy carriers into the initially-depleted channels. We furthermore demonstrate the use of these NCs as room-temperature sensors, capable of demonstrating a clear photo-response at frequencies well beyond 1 THz. By taking advantage of signal rectification associated with the Gunn effect, we achieve competitive values for the sensor responsivity and noise equivalent power, in spite of the fact that our devices do not make use of any antenna structure to efficiently couple the radiation. Such observations suggest that our work may represent a useful step towards the realization of new classes of solid-state THz sources and detectors.

ISBN: 9781321569193Subjects--Topical Terms:

649834
Electrical engineering.

Gunn Effect in Heterostructure-Based Semiconductor Nanoconstrictions and its Application to THz Sensing.
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100 1 $a Chen, Rui. $3 1025253
245 1 0 $a Gunn Effect in Heterostructure-Based Semiconductor Nanoconstrictions and its Application to THz Sensing.
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500 $a Source: Dissertation Abstracts International, Volume: 76-07(E), Section: B.
500 $a Adviser: Jonathan P. Bird.
502 $a Thesis (Ph.D.)--State University of New York at Buffalo, 2015.
520 $a The subject of this thesis is the exploration of the Gunn effect in novel semiconductor nanoconstrictions (NCs). While the Gunn effect has long been exploited as a means to realize versatile solid-state microwave sources, recent interest in this phenomenon has focused on its potential use in terahertz (THz) sources and detectors. In this thesis, we present experimental evidence for the Gunn effect in GaAs-based NCs, fabricated utilizing advanced nanofabrication techniques. Our studies reveal that the nonequilibrium current-voltage characteristics of these devices exhibit several distinct features that are collectively consistent with this phenomenon. These include current saturation arising from velocity overshoot, strongly-enhanced current instabilities due to impact ionization within high-field domains, and pronounced hysteresis accompanied by electroluminescence. Theoretical modeling indicates that the onset of the Gunn behavior is triggered by the full development of drain-induced barrier lowering (DIBL), which allows for the injection of high-energy carriers into the initially-depleted channels. We furthermore demonstrate the use of these NCs as room-temperature sensors, capable of demonstrating a clear photo-response at frequencies well beyond 1 THz. By taking advantage of signal rectification associated with the Gunn effect, we achieve competitive values for the sensor responsivity and noise equivalent power, in spite of the fact that our devices do not make use of any antenna structure to efficiently couple the radiation. Such observations suggest that our work may represent a useful step towards the realization of new classes of solid-state THz sources and detectors.
590 $a School code: 0656.
650 4 $a Electrical engineering. $3 649834
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710 2 $a State University of New York at Buffalo. $b Electrical Engineering. $3 1019366
773 0 $t Dissertation Abstracts International $g 76-07B(E).
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791 $a Ph.D.
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