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A Gate Sinking Threshold Voltage Adj...

Zhang, Weijia.

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A Gate Sinking Threshold Voltage Adjustment Technique for High Voltage GaN HEMT.

Record Type:	Electronic resources : Monograph/item
Title/Author:	A Gate Sinking Threshold Voltage Adjustment Technique for High Voltage GaN HEMT./
Author:	Zhang, Weijia.
Description:	111 p.
Notes:	Source: Masters Abstracts International, Volume: 55-01.
Contained By:	Masters Abstracts International55-01(E).
Subject:	Electrical engineering. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1599288
ISBN:	9781339056593

A Gate Sinking Threshold Voltage Adjustment Technique for High Voltage GaN HEMT.
Zhang, Weijia.

A Gate Sinking Threshold Voltage Adjustment Technique for High Voltage GaN HEMT. - 111 p.

Source: Masters Abstracts International, Volume: 55-01.

Thesis (M.A.S.)--University of Toronto (Canada), 2015.

GaN-based power electronics receive many interests because of its wider bandgap, higher electron mobility and higher critical electrical field than silicon. However, the intrinsic AlGaN/GaN-based HEMT is a "normally-on" device. This thesis proposes a gate sinking method during the metal gate deposition to adjust the VT towards enhancement mode operation. This recessed gate process relies on the chemical reaction between Ta and AlGaN using a simple RTA procedure rather than the more complicated RIE method. This eliminates the need for etching with nanometer precision. During the Ta sputtering process, both Ar and N2 carrier gases are used to form TaN with work function in the range of 4.15 to 4.7 eV. The fabricated HV GaN HEMTs exhibit VT shift from -5 to -2 V. Moreover, the proposed device is compatible with silicon-CMOS technology to ensure cost-effective implementation of future high performance smart power ICs.

ISBN: 9781339056593Subjects--Topical Terms:

649834
Electrical engineering.

A Gate Sinking Threshold Voltage Adjustment Technique for High Voltage GaN HEMT.
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020 $a 9781339056593
035 $a (MiAaPQ)AAI1599288
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100 1 $a Zhang, Weijia. $3 3182180
245 1 2 $a A Gate Sinking Threshold Voltage Adjustment Technique for High Voltage GaN HEMT.
300 $a 111 p.
500 $a Source: Masters Abstracts International, Volume: 55-01.
500 $a Adviser: Wai Tung Ng.
502 $a Thesis (M.A.S.)--University of Toronto (Canada), 2015.
520 $a GaN-based power electronics receive many interests because of its wider bandgap, higher electron mobility and higher critical electrical field than silicon. However, the intrinsic AlGaN/GaN-based HEMT is a "normally-on" device. This thesis proposes a gate sinking method during the metal gate deposition to adjust the VT towards enhancement mode operation. This recessed gate process relies on the chemical reaction between Ta and AlGaN using a simple RTA procedure rather than the more complicated RIE method. This eliminates the need for etching with nanometer precision. During the Ta sputtering process, both Ar and N2 carrier gases are used to form TaN with work function in the range of 4.15 to 4.7 eV. The fabricated HV GaN HEMTs exhibit VT shift from -5 to -2 V. Moreover, the proposed device is compatible with silicon-CMOS technology to ensure cost-effective implementation of future high performance smart power ICs.
590 $a School code: 0779.
650 4 $a Electrical engineering. $3 649834
690 $a 0544
710 2 $a University of Toronto (Canada). $b Electrical and Computer Engineering. $3 2096349
773 0 $t Masters Abstracts International $g 55-01(E).
790 $a 0779
791 $a M.A.S.
792 $a 2015
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1599288