東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Electronic and optoelectronic device...

Zhang, Kan.

Linked to FindBook

Google Book

Amazon

博客來

Electronic and optoelectronic devices enabled by transferrable semiconductor nanomembranes.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Electronic and optoelectronic devices enabled by transferrable semiconductor nanomembranes./
Author:	Zhang, Kan.
Description:	132 p.
Notes:	Source: Dissertation Abstracts International, Volume: 73-07(E), Section: B.
Contained By:	Dissertation Abstracts International73-07B(E).
Subject:	Electrical engineering. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3501177
ISBN:	9781267222299

Electronic and optoelectronic devices enabled by transferrable semiconductor nanomembranes.
Zhang, Kan.

Electronic and optoelectronic devices enabled by transferrable semiconductor nanomembranes. - 132 p.

Source: Dissertation Abstracts International, Volume: 73-07(E), Section: B.

Thesis (Ph.D.)--The University of Wisconsin - Madison, 2011.

This item must not be sold to any third party vendors.

Monocrystalline semiconductor nanomembranes, sacrificially released from elemental and compound semiconductors, have become attractive device building blocks for their various unique features. While maintaining monocrystalline nature, the released freestanding nanomembranes demonstrate ultra mechanical flexibility and capability of stress accommodation as special thin films, all of which are essential for flexible electronic and optoelectronic applications and material integration, and bring great impact to semiconductor device physics and material engineering toward higher performance in electronic and optoelectronic devices.

ISBN: 9781267222299Subjects--Topical Terms:

649834
Electrical engineering.

Electronic and optoelectronic devices enabled by transferrable semiconductor nanomembranes.
LDR:02782nmm a2200325 4500 001 2059917
005 20150822105423.5
008 170521s2011 ||||||||||||||||| ||eng d
020 $a 9781267222299
035 $a (MiAaPQ)AAI3501177
035 $a AAI3501177
040 $a MiAaPQ $c MiAaPQ
100 1 $a Zhang, Kan. $3 1004807
245 1 0 $a Electronic and optoelectronic devices enabled by transferrable semiconductor nanomembranes.
300 $a 132 p.
500 $a Source: Dissertation Abstracts International, Volume: 73-07(E), Section: B.
500 $a Adviser: Zhenqiang Jack Ma.
502 $a Thesis (Ph.D.)--The University of Wisconsin - Madison, 2011.
506 $a This item must not be sold to any third party vendors.
506 $a This item must not be added to any third party search indexes.
520 $a Monocrystalline semiconductor nanomembranes, sacrificially released from elemental and compound semiconductors, have become attractive device building blocks for their various unique features. While maintaining monocrystalline nature, the released freestanding nanomembranes demonstrate ultra mechanical flexibility and capability of stress accommodation as special thin films, all of which are essential for flexible electronic and optoelectronic applications and material integration, and bring great impact to semiconductor device physics and material engineering toward higher performance in electronic and optoelectronic devices.
520 $a In this thesis, the flexibility feature and the capability of material integration are explored. Innovated device structures and applications, including artificial human/mammal eye and artificial compound eye, flexible BiCMOS integration, flexible high-responsivity photodetector, and heterogeneous Si/InGaAs tunneling diode, are designed and demonstrated. Fabrication process flow is also refined to deplete the nanomembrane capabilities and enable the aforementioned devices. Alignment is successfully incorporated into nanomembrane transfer process for fabricating flexible devices on complicated surfaces and a novel concept of post-critical-dimension membrane transfer procedure is proposed and implemented, providing a promising procedure for further improving flexible MOSFET performance by following the scaling down theory.
520 $a Nuclear isotope betavoltaic power source was investigated by using Direct Monte Carlo simulations for the first time. The performance of power source using different types of semiconductors at different temperatures is compared.
590 $a School code: 0262.
650 4 $a Electrical engineering. $3 649834
650 4 $a Nanotechnology. $3 526235
690 $a 0544
690 $a 0652
710 2 $a The University of Wisconsin - Madison. $3 626640
773 0 $t Dissertation Abstracts International $g 73-07B(E).
790 $a 0262
791 $a Ph.D.
792 $a 2011
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3501177