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Emerging resistive switching memories

Ouyang, Jianyong.

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Emerging resistive switching memories

Record Type:	Electronic resources : Monograph/item
Title/Author:	Emerging resistive switching memories/ by Jianyong Ouyang.
Author:	Ouyang, Jianyong.
Published:	Cham :Springer International Publishing : : 2016.,
Description:	viii, 93 p. :ill., digital ;24 cm.
[NT 15003449]:	Introduction to history of memory devices and the present memory devices -- Introduction of resistive switches memory devices with nanoparticles -- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode -- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode -- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles -- Mechanisms for resistive switches -- Application of the resistive switching devices with nanoparticles.
Contained By:	Springer eBooks
Subject:	Nonvolatile random-access memory. -
Online resource:	http://dx.doi.org/10.1007/978-3-319-31572-0
ISBN:	9783319315720

Emerging resistive switching memories
Ouyang, Jianyong.

Emerging resistive switching memories[electronic resource] /by Jianyong Ouyang. - Cham :Springer International Publishing :2016. - viii, 93 p. :ill., digital ;24 cm. - SpringerBriefs in materials,2192-1091. - SpringerBriefs in materials..

Introduction to history of memory devices and the present memory devices -- Introduction of resistive switches memory devices with nanoparticles -- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode -- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode -- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles -- Mechanisms for resistive switches -- Application of the resistive switching devices with nanoparticles.

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.

ISBN: 9783319315720

Standard No.: 10.1007/978-3-319-31572-0doiSubjects--Topical Terms:

2062712
Nonvolatile random-access memory.

LC Class. No.: TK7895.M4

Dewey Class. No.: 621.3973

Emerging resistive switching memories
LDR:02062nmm a2200337 a 4500 001 2043360
003 DE-He213
005 20161214114926.0
006 m d
007 cr nn 008maaau
008 170217s2016 gw s 0 eng d
020 $a 9783319315720 $q (electronic bk.)
020 $a 9783319315706 $q (paper)
024 7 $a 10.1007/978-3-319-31572-0 $2 doi
035 $a 978-3-319-31572-0
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7895.M4
072 7 $a TBN $2 bicssc
072 7 $a TEC027000 $2 bisacsh
072 7 $a SCI050000 $2 bisacsh
082 0 4 $a 621.3973 $2 23
090 $a TK7895.M4 $b O95 2016
100 1 $a Ouyang, Jianyong. $3 2203143
245 1 0 $a Emerging resistive switching memories $h [electronic resource] / $c by Jianyong Ouyang.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2016.
300 $a viii, 93 p. : $b ill., digital ; $c 24 cm.
490 1 $a SpringerBriefs in materials, $x 2192-1091
505 0 $a Introduction to history of memory devices and the present memory devices -- Introduction of resistive switches memory devices with nanoparticles -- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode -- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode -- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles -- Mechanisms for resistive switches -- Application of the resistive switching devices with nanoparticles.
520 $a This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
650 0 $a Nonvolatile random-access memory. $3 2062712
650 1 4 $a Materials Science. $3 890867
650 2 4 $a Nanotechnology. $3 526235
650 2 4 $a Electronic Circuits and Devices. $3 1245773
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 893838
650 2 4 $a Memory Structures. $3 898261
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer eBooks
830 0 $a SpringerBriefs in materials. $3 1566517
856 4 0 $u http://dx.doi.org/10.1007/978-3-319-31572-0
950 $a Chemistry and Materials Science (Springer-11644)