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Tunneling field effect transistor te...

Zhang, Lining.

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Tunneling field effect transistor technology

Record Type:	Electronic resources : Monograph/item
Title/Author:	Tunneling field effect transistor technology/ edited by Lining Zhang, Mansun Chan.
other author:	Zhang, Lining.
Published:	Cham :Springer International Publishing : : 2016.,
Description:	ix, 213 p. :ill. (some col.), digital ;24 cm.
Contained By:	Springer eBooks
Subject:	Field-effect transistors. -
Online resource:	http://dx.doi.org/10.1007/978-3-319-31653-6
ISBN:	9783319316536

Tunneling field effect transistor technology
Tunneling field effect transistor technology[electronic resource] /edited by Lining Zhang, Mansun Chan. - Cham :Springer International Publishing :2016. - ix, 213 p. :ill. (some col.), digital ;24 cm.

This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs) Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

ISBN: 9783319316536

Standard No.: 10.1007/978-3-319-31653-6doiSubjects--Topical Terms:

700655
Field-effect transistors.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.3815284

Tunneling field effect transistor technology
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020 $a 9783319316536 $q (electronic bk.)
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035 $a 978-3-319-31653-6
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090 $a TK7871.95 $b .T926 2016
245 0 0 $a Tunneling field effect transistor technology $h [electronic resource] / $c edited by Lining Zhang, Mansun Chan.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2016.
300 $a ix, 213 p. : $b ill. (some col.), digital ; $c 24 cm.
520 $a This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs) Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.
650 0 $a Field-effect transistors. $3 700655
650 1 4 $a Engineering. $3 586835
650 2 4 $a Circuits and Systems. $3 896527
650 2 4 $a Electronic Circuits and Devices. $3 1245773
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 893838
700 1 $a Zhang, Lining. $3 2191536
700 1 $a Chan, Mansun. $3 2191537
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer eBooks
856 4 0 $u http://dx.doi.org/10.1007/978-3-319-31653-6
950 $a Engineering (Springer-11647)