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Molecular beam epitaxy : = a short h...

Orton, J. W.

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Molecular beam epitaxy : = a short history /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Molecular beam epitaxy :/ John Orton and Tom Foxon.
其他題名:	a short history /
作者:	Orton, J. W.
其他作者:	Foxon, Tom.
出版者:	Oxford :Oxford University Press, : 2015.,
面頁冊數:	xii, 516 p. :ill. ;26 cm.
標題:	Semiconductors - History. -
ISBN:	9780199695829

Molecular beam epitaxy : = a short history /
Orton, J. W.

Molecular beam epitaxy :a short history /John Orton and Tom Foxon. - 1st ed. - Oxford :Oxford University Press,2015. - xii, 516 p. :ill. ;26 cm.

Includes bibliographical references and indexes.

Molecular Beam Epitaxy (MBE) is a well-recognised source of high-quality semiconductor films and, after fifty years of development, it is now widely used in the manufacture of semiconductor devices such as transistors and laser diodes used in practically every aspect of modern life. This book provides a historical account of MBE's development, together with a critical summary of its contribution to the understanding of crystal growth. Starting with MBE's inception during the 1970s, the book traces its application to a wide range of semiconductor materials and structures, important in fundamental physics and materials science. Materials covered include Si, Ge, III-Vs, II-VIs and IV-VIs. It also describes the development of a range of electrical and optical semiconductor, devices. Emphasis is placed on MBE's ability to grow films with dimensions of a few atomic layers which led to the exciting low-dimensional structures initiative during the 1980s. The book is written in a relaxed style and emphasises the 'human' aspects of the subject as well as the technical Book jacket.

ISBN: 9780199695829UK45.00

LCCN: 2014958219Subjects--Topical Terms:

699591
Semiconductors
--History.

LC Class. No.: QC611.6.M64 / .O78 2015

Dewey Class. No.: 621.38152

Molecular beam epitaxy : = a short history /
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003 OCoLC
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020 $a 9780199695829 $q (hbk.) : $c UK45.00
020 $a 0199695822 $q (hbk.)
035 $a (OCoLC)913820582 $z (OCoLC)907194353 $z (OCoLC)918891421 $z (OCoLC)920467964
040 $a StDuBDS $b eng $c CUD $d OCLCO $d BTCTA $d BDX $d YDXCP $d EQO $d CDX $d OCLCF $d NLGGC
050 0 4 $a QC611.6.M64 $b .O78 2015
082 0 4 $a 621.38152 $2 23
100 1 $a Orton, J. W. $q (John Wilfred) $3 1641250
245 1 0 $a Molecular beam epitaxy : $b a short history / $c John Orton and Tom Foxon.
250 $a 1st ed.
260 $a Oxford : $b Oxford University Press, $c 2015.
300 $a xii, 516 p. : $b ill. ; $c 26 cm.
504 $a Includes bibliographical references and indexes.
520 $a Molecular Beam Epitaxy (MBE) is a well-recognised source of high-quality semiconductor films and, after fifty years of development, it is now widely used in the manufacture of semiconductor devices such as transistors and laser diodes used in practically every aspect of modern life. This book provides a historical account of MBE's development, together with a critical summary of its contribution to the understanding of crystal growth. Starting with MBE's inception during the 1970s, the book traces its application to a wide range of semiconductor materials and structures, important in fundamental physics and materials science. Materials covered include Si, Ge, III-Vs, II-VIs and IV-VIs. It also describes the development of a range of electrical and optical semiconductor, devices. Emphasis is placed on MBE's ability to grow films with dimensions of a few atomic layers which led to the exciting low-dimensional structures initiative during the 1980s. The book is written in a relaxed style and emphasises the 'human' aspects of the subject as well as the technical Book jacket.
650 0 $a Semiconductors $x History. $3 699591
650 0 $a Molecular beam epitaxy. $3 601057
700 1 $a Foxon, Tom. $3 2183551