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Field-effect self-mixing terahertz d...

Sun, Jiandong.

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Field-effect self-mixing terahertz detectors /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Field-effect self-mixing terahertz detectors // Jiandong Sun.
Author:	Sun, Jiandong.
Published:	Berlin :Springer, : 2016.,
Description:	xviii, 126 p. :ill. (some col.) ;25 cm.
Notes:	"Doctoral thesis accepted by Chinese Academy of Sciences, China."
[NT 15003449]:	Introduction -- Field-Effect Self-Mixing Mechanism and DetectorModel -- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT -- Realization of Resonant Plasmon Excitation and Detection -- Scanning Near-Field Probe for Antenna Characterization -- Applications -- Conclusions and Outlook.
Subject:	Terahertz technology. -
ISBN:	9783662486795

Field-effect self-mixing terahertz detectors /
Sun, Jiandong.

Field-effect self-mixing terahertz detectors /Jiandong Sun. - Berlin :Springer,2016. - xviii, 126 p. :ill. (some col.) ;25 cm. - Springer theses. - Springer theses..

"Doctoral thesis accepted by Chinese Academy of Sciences, China."

Includes bibliographical references.

Introduction -- Field-Effect Self-Mixing Mechanism and DetectorModel -- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT -- Realization of Resonant Plasmon Excitation and Detection -- Scanning Near-Field Probe for Antenna Characterization -- Applications -- Conclusions and Outlook.

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electronchannel that plays an important role in the high responsivity. AnAlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed andcan offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.

ISBN: 9783662486795EUR99.99Subjects--Topical Terms:

1002586
Terahertz technology.

LC Class. No.: TK7877

Dewey Class. No.: 621.381/3

Field-effect self-mixing terahertz detectors /
LDR:02204nam a2200253 a 4500 001 2017753
003 OCoLC
005 20160824044840.0
008 160929s2016 gw a b 000 0 eng d
020 $a 9783662486795 $q (hbk.) : $c EUR99.99
020 $a 9783662486818 $q (ebook)
020 $a 3662486814 $q (ebook)
020 $z 3662486792
035 $a (OCoLC)934886591 $z (OCoLC)935640238
040 $a YDXCP $b eng $e pn $c YDXCP $d GW5XE $d EBLCP $d OCLCF $d AZU $d COO $d DEBSZ $d IDEBK
050 4 $a TK7877
082 0 4 $a 621.381/3 $2 23
100 1 $a Sun, Jiandong. $3 2181872
245 1 0 $a Field-effect self-mixing terahertz detectors / $c Jiandong Sun.
260 $a Berlin : $b Springer, $c 2016.
300 $a xviii, 126 p. : $b ill. (some col.) ; $c 25 cm.
490 1 $a Springer theses
500 $a "Doctoral thesis accepted by Chinese Academy of Sciences, China."
504 $a Includes bibliographical references.
505 0 $a Introduction -- Field-Effect Self-Mixing Mechanism and DetectorModel -- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT -- Realization of Resonant Plasmon Excitation and Detection -- Scanning Near-Field Probe for Antenna Characterization -- Applications -- Conclusions and Outlook.
520 $a A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electronchannel that plays an important role in the high responsivity. AnAlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed andcan offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.
650 0 $a Terahertz technology. $3 1002586
830 0 $a Springer theses. $3 1314442