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Defects and impurities in silicon ma...

Yoshida, Yutaka.

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Defects and impurities in silicon materials = an introduction to atomic-level silicon engineering /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Defects and impurities in silicon materials/ edited by Yutaka Yoshida, Guido Langouche.
Reminder of title:	an introduction to atomic-level silicon engineering /
other author:	Yoshida, Yutaka.
Published:	Tokyo :Springer Japan : : 2015.,
Description:	xv, 487 p. :ill. (some col.), digital ;24 cm.
[NT 15003449]:	Diffusion and point defects in silicon materials -- Density functional modeling of defects and impurities in silicon materials -- Electrical and optical defect evaluation techniques for electronic and solar grade silicon -- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt -- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells -- Oxygen precipitation in silicon -- Defect characterization by electron beam induced current and cathode luminescence methods -- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators -- Defect Engineering in silicon materials.
Contained By:	Springer eBooks
Subject:	Silicon. -
Online resource:	http://dx.doi.org/10.1007/978-4-431-55800-2
ISBN:	9784431558002$q(electronic bk.)

Defects and impurities in silicon materials = an introduction to atomic-level silicon engineering /
Defects and impurities in silicon materialsan introduction to atomic-level silicon engineering /[electronic resource] :edited by Yutaka Yoshida, Guido Langouche. - Tokyo :Springer Japan :2015. - xv, 487 p. :ill. (some col.), digital ;24 cm. - Lecture notes in physics,v.9160075-8450 ;. - Lecture notes in physics ;715..

Diffusion and point defects in silicon materials -- Density functional modeling of defects and impurities in silicon materials -- Electrical and optical defect evaluation techniques for electronic and solar grade silicon -- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt -- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells -- Oxygen precipitation in silicon -- Defect characterization by electron beam induced current and cathode luminescence methods -- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators -- Defect Engineering in silicon materials.

This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

ISBN: 9784431558002$q(electronic bk.)

Standard No.: 10.1007/978-4-431-55800-2doiSubjects--Topical Terms:

669429
Silicon.

LC Class. No.: TK7871.15.S55

Dewey Class. No.: 620.193

Defects and impurities in silicon materials = an introduction to atomic-level silicon engineering /
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300 $a xv, 487 p. : $b ill. (some col.), digital ; $c 24 cm.
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505 0 $a Diffusion and point defects in silicon materials -- Density functional modeling of defects and impurities in silicon materials -- Electrical and optical defect evaluation techniques for electronic and solar grade silicon -- Intrinsic point defect engineering during single crystal Si and Ge growth from a melt -- Computer simulation of crystal growth for CZ-Si single crystals and Si solar cells -- Oxygen precipitation in silicon -- Defect characterization by electron beam induced current and cathode luminescence methods -- Nuclear methods to study defects and impurities in Si materials using heavy ion accelerators -- Defect Engineering in silicon materials.
520 $a This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
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