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High Efficiency Linear/Nonlinear Pow...

Kantemur, Adnan.

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High Efficiency Linear/Nonlinear Power Amplifier Design with Distributed Elements.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	High Efficiency Linear/Nonlinear Power Amplifier Design with Distributed Elements./
作者:	Kantemur, Adnan.
面頁冊數:	109 p.
附註:	Source: Masters Abstracts International, Volume: 52-03.
Contained By:	Masters Abstracts International52-03(E).
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1547268
ISBN:	9781303485862

High Efficiency Linear/Nonlinear Power Amplifier Design with Distributed Elements.
Kantemur, Adnan.

High Efficiency Linear/Nonlinear Power Amplifier Design with Distributed Elements. - 109 p.

Source: Masters Abstracts International, Volume: 52-03.

Thesis (M.S.)--University of California, Irvine, 2013.

Radio Frequency Power Amplifiers (RF PAs) are inevitable part of the any wireless communication systems. As new requirements increases, new challenges presents for PA designers. The main issue for designing a PA is to have highly linear and high efficient design at same time to have high output power and power gain. When we talk about linear PAs, most of the time they are easy to complete the design with S parameters but they have low efficiency. On the other hand, if we go further in the frequency domain, it is difficult to find stable lumped elements. In this case, it is better to complete design with distributed elements but since we are dealing with high power, distribute elements may not handle high temperature. Therefore design should complete carefully.

ISBN: 9781303485862Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

High Efficiency Linear/Nonlinear Power Amplifier Design with Distributed Elements.
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245 1 0 $a High Efficiency Linear/Nonlinear Power Amplifier Design with Distributed Elements.
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500 $a Source: Masters Abstracts International, Volume: 52-03.
500 $a Adviser: Franco De Flaviis.
502 $a Thesis (M.S.)--University of California, Irvine, 2013.
520 $a Radio Frequency Power Amplifiers (RF PAs) are inevitable part of the any wireless communication systems. As new requirements increases, new challenges presents for PA designers. The main issue for designing a PA is to have highly linear and high efficient design at same time to have high output power and power gain. When we talk about linear PAs, most of the time they are easy to complete the design with S parameters but they have low efficiency. On the other hand, if we go further in the frequency domain, it is difficult to find stable lumped elements. In this case, it is better to complete design with distributed elements but since we are dealing with high power, distribute elements may not handle high temperature. Therefore design should complete carefully.
520 $a The small signal S parameters are not suitable for power amplifier (PA) design because most of the high efficiency PAs are operate in the nonlinear region. Therefore new form of S parameters should be defined under large signal input. Hence, an alternative set of large signal parameters is needed to characterize the transistor. This can be only done by providing source and load reflection coefficients as a function of output power and gain. The way of finding proper source/load reflection coefficient is applying load/source pull measurement. In this measurement, source and load of the transistor connects to a tuner and input power level changes by helping of a software output power contours can be observe and optimum load/source reflection coefficients can be obtained. This measurement should be done not only for fundamental frequency but also harmonics; especially second and third harmonics have critical effect on the efficiency of the transistor. To achieve highly efficient PA these harmonics should be suppressed. This is can be done with harmonic matching networks.
520 $a To other problem when we talk about PA is high power, since we need high power input stage our device should handle high power. This is one of limitation of a transistor. Beauty of GaN FET is can work under very high power level. GaN transistors are stable in very high temperature that makes these devices must have component in the PA design.
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793 $a English
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