利用雙層結構改善二氧化鋯軟性電阻式記憶體特性之研究 = = Resea...
蘇哲庭

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  • 利用雙層結構改善二氧化鋯軟性電阻式記憶體特性之研究 = = Research of ZrO2-Based Flexible Resistive Switching Memory Improved by Bi-Layered Structure /
  • Record Type: Language materials, printed : Monograph/item
    Title/Author: 利用雙層結構改善二氧化鋯軟性電阻式記憶體特性之研究 = / 蘇哲庭撰
    Reminder of title: Research of ZrO2-Based Flexible Resistive Switching Memory Improved by Bi-Layered Structure /
    remainder title: Research of ZrO2-Based Flexible Resistive Switching Memory Improved by Bi-Layered Structure
    Author: 蘇哲庭
    other author: 林群傑
    Published: [花蓮縣壽豐鄉] : [國立東華大學電機工程學系], : 民102年[2013],
    Description: 11,78面 : 圖,表 ; 30公分
    Notes: 畢業學年度: 101
    Online resource: http://134.208.29.93/cgi-bin/cdrfb3/gsweb.cgi?o=dstdcdr&i=ssid=%22610023108%22.PDF全文
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  • 1 records • Pages 1 •
 
GE0139706 五樓論文區 (5F Theses & Dissertations) 03.不外借_N 本校碩士論文 T 448.6 4450.1 2013 一般使用(Normal) On shelf 0
  • 1 records • Pages 1 •
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