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Narrow and broad band photoluminesce...

Sweiti, Ayman.

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Narrow and broad band photoluminescence spectroscopy of cadmium zinc selenide semiconductor.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Narrow and broad band photoluminescence spectroscopy of cadmium zinc selenide semiconductor./
作者:	Sweiti, Ayman.
面頁冊數:	83 p.
附註:	Source: Dissertation Abstracts International, Volume: 65-01, Section: B, page: 0266.
Contained By:	Dissertation Abstracts International65-01B.
標題:	Physics, Condensed Matter. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3120001

Narrow and broad band photoluminescence spectroscopy of cadmium zinc selenide semiconductor.
Sweiti, Ayman.

Narrow and broad band photoluminescence spectroscopy of cadmium zinc selenide semiconductor. - 83 p.

Source: Dissertation Abstracts International, Volume: 65-01, Section: B, page: 0266.

Thesis (Ph.D.)--Florida Atlantic University, 2003.

In this dissertation I have used photoluminescence (PL) spectrometric analysis to measure the temperature dependence of the spectral features of the direct band gap semiconductor CdxZn1-xSe , for two nominal concentrations x = 0.25, 0.50, in the temperature range 25--300 K. The effective concentrations were obtained from analysis of the spectra. The parameters that describe the temperature dependence of the line width broadening have been evaluated using different models. The PL broadband characteristics of Cd0.22Zn0.78Se and Cd0.41Zn0.59Se are also investigated within the energy range 1.36--2.40 eV and temperature range 25--305 K. Two broad bands are observed, the higher energy band I centered at 1.991 and 1.773 eV, the lower energy band II centered at 1.844 and 1.705 eV for the two samples, respectively. The emission bands are attributed to donor-acceptor pair transitions. The energy scheme shows two donors and two acceptor levels, the binding energies of the donors for Cd 0.22Zn0.78Se are 29 and 208 meV below the conduction band, the binding energies of the acceptors 472 and 511 meV above the valence band. The binding energies of the donors for Cd0.41Zn 0.59Se are 27 and 137 meV, the binding energies of the acceptors 393 and 423 eV. A significant blue shift in energy with increasing temperature was observed for the lower energy band. The ionization temperatures for the deep donors are 279 and 287 K for Cd0.22Zn0.78Se and Cd0.41Zn0.59Se, respectively.Subjects--Topical Terms:

1018743
Physics, Condensed Matter.

Narrow and broad band photoluminescence spectroscopy of cadmium zinc selenide semiconductor.
LDR:02364nmm 2200265 4500 001 1864719
005 20041216132640.5
008 130614s2003 eng d
035 $a (UnM)AAI3120001
035 $a AAI3120001
040 $a UnM $c UnM
100 1 $a Sweiti, Ayman. $3 1952195
245 1 0 $a Narrow and broad band photoluminescence spectroscopy of cadmium zinc selenide semiconductor.
300 $a 83 p.
500 $a Source: Dissertation Abstracts International, Volume: 65-01, Section: B, page: 0266.
500 $a Adviser: Fernando D. Medina.
502 $a Thesis (Ph.D.)--Florida Atlantic University, 2003.
520 $a In this dissertation I have used photoluminescence (PL) spectrometric analysis to measure the temperature dependence of the spectral features of the direct band gap semiconductor CdxZn1-xSe , for two nominal concentrations x = 0.25, 0.50, in the temperature range 25--300 K. The effective concentrations were obtained from analysis of the spectra. The parameters that describe the temperature dependence of the line width broadening have been evaluated using different models. The PL broadband characteristics of Cd0.22Zn0.78Se and Cd0.41Zn0.59Se are also investigated within the energy range 1.36--2.40 eV and temperature range 25--305 K. Two broad bands are observed, the higher energy band I centered at 1.991 and 1.773 eV, the lower energy band II centered at 1.844 and 1.705 eV for the two samples, respectively. The emission bands are attributed to donor-acceptor pair transitions. The energy scheme shows two donors and two acceptor levels, the binding energies of the donors for Cd 0.22Zn0.78Se are 29 and 208 meV below the conduction band, the binding energies of the acceptors 472 and 511 meV above the valence band. The binding energies of the donors for Cd0.41Zn 0.59Se are 27 and 137 meV, the binding energies of the acceptors 393 and 423 eV. A significant blue shift in energy with increasing temperature was observed for the lower energy band. The ionization temperatures for the deep donors are 279 and 287 K for Cd0.22Zn0.78Se and Cd0.41Zn0.59Se, respectively.
590 $a School code: 0119.
650 4 $a Physics, Condensed Matter. $3 1018743
650 4 $a Chemistry, Analytical. $3 586156
690 $a 0611
690 $a 0486
710 2 0 $a Florida Atlantic University. $3 1017837
773 0 $t Dissertation Abstracts International $g 65-01B.
790 1 0 $a Medina, Fernando D., $e advisor
790 $a 0119
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3120001