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Plasma nitrided silicon dioxide studies.

Brewer, Jason Douglas.

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Plasma nitrided silicon dioxide studies.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Plasma nitrided silicon dioxide studies./
Author:	Brewer, Jason Douglas.
Description:	164 p.
Notes:	Source: Dissertation Abstracts International, Volume: 64-08, Section: B, page: 3837.
Contained By:	Dissertation Abstracts International64-08B.
Subject:	Chemistry, Physical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3100266

Plasma nitrided silicon dioxide studies.
Brewer, Jason Douglas.

Plasma nitrided silicon dioxide studies. - 164 p.

Source: Dissertation Abstracts International, Volume: 64-08, Section: B, page: 3837.

Thesis (Ph.D.)--The University of North Carolina at Chapel Hill, 2003.

The scaling down of the dimensions of Metal Oxide Semiconductor Field-Effect Transistors (MOSFET) in the microelectronics industry is approaching a fundamental limit due to direct electron tunneling through the silicon dioxide (SiO 2) gate dielectric. Consequently, a higher dielectric constant (kappa) material must be engineered to replace SiO2 (kappa = 3.9) so that the gate dielectric can be made physically thicker to prevent leakage current and enhance reliability. However, the solution is not as straightforward as simply replacing SiO2 with a higher-kappa material. The high-kappa dielectric must meet several stringent requirements in order to effectively replace SiO2. This is proving to be a difficult problem to solve, and therefore there is a need for a segue material to extend MOSFET scaling for the near term. Silicon oxynitride (SiOxN y, kappa: 3.9--7.0) has received much attention as a segue material, due to its enhanced durability and diffusion barrier properties. Several methods have been investigated for producing SiOxNy, however much work needs to be done to develop a method, which allows control over the nitrogen composition and location to produce a film with a high enough electronic quality to replace SiO2. To this end, a combined electron cyclotron resonance (ECR) and radio frequency (RF) plasma process was employed to study SiOxNy films with the goal of preserving the high quality silicon-SiO2 interface and increasing the nitrogen content towards the surface of the film to increase kappa. Specifically, the plasma nitridation of thermal SiO2 films, and the plasma oxynitridation of bare silicon substrates were studied. Plasma process parameters such as; plasma mode, chamber pressure, RF bias magnitude, ECR power, and gas feed composition were varied allowing the ability to tailor the film properties. Selection of the proper plasma parameters has afforded control over film thickness, nitrogen content, nitrogen location, density of interface trapped charge ( Dit), and density of fixed charge (Dfc). Spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES), atomic force microscopy (AFM), capacitance-voltage (C-V) measurements, and thermal annealing studies were used to characterize the films and are presented throughout.Subjects--Topical Terms:

560527
Chemistry, Physical.

Plasma nitrided silicon dioxide studies.
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035 $a (UnM)AAI3100266
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100 1 $a Brewer, Jason Douglas. $3 1952134
245 1 0 $a Plasma nitrided silicon dioxide studies.
300 $a 164 p.
500 $a Source: Dissertation Abstracts International, Volume: 64-08, Section: B, page: 3837.
500 $a Adviser: Eugene A. Irene.
502 $a Thesis (Ph.D.)--The University of North Carolina at Chapel Hill, 2003.
520 $a The scaling down of the dimensions of Metal Oxide Semiconductor Field-Effect Transistors (MOSFET) in the microelectronics industry is approaching a fundamental limit due to direct electron tunneling through the silicon dioxide (SiO 2) gate dielectric. Consequently, a higher dielectric constant (kappa) material must be engineered to replace SiO2 (kappa = 3.9) so that the gate dielectric can be made physically thicker to prevent leakage current and enhance reliability. However, the solution is not as straightforward as simply replacing SiO2 with a higher-kappa material. The high-kappa dielectric must meet several stringent requirements in order to effectively replace SiO2. This is proving to be a difficult problem to solve, and therefore there is a need for a segue material to extend MOSFET scaling for the near term. Silicon oxynitride (SiOxN y, kappa: 3.9--7.0) has received much attention as a segue material, due to its enhanced durability and diffusion barrier properties. Several methods have been investigated for producing SiOxNy, however much work needs to be done to develop a method, which allows control over the nitrogen composition and location to produce a film with a high enough electronic quality to replace SiO2. To this end, a combined electron cyclotron resonance (ECR) and radio frequency (RF) plasma process was employed to study SiOxNy films with the goal of preserving the high quality silicon-SiO2 interface and increasing the nitrogen content towards the surface of the film to increase kappa. Specifically, the plasma nitridation of thermal SiO2 films, and the plasma oxynitridation of bare silicon substrates were studied. Plasma process parameters such as; plasma mode, chamber pressure, RF bias magnitude, ECR power, and gas feed composition were varied allowing the ability to tailor the film properties. Selection of the proper plasma parameters has afforded control over film thickness, nitrogen content, nitrogen location, density of interface trapped charge ( Dit), and density of fixed charge (Dfc). Spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES), atomic force microscopy (AFM), capacitance-voltage (C-V) measurements, and thermal annealing studies were used to characterize the films and are presented throughout.
590 $a School code: 0153.
650 4 $a Chemistry, Physical. $3 560527
650 4 $a Physics, Fluid and Plasma. $3 1018402
650 4 $a Engineering, Materials Science. $3 1017759
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710 2 0 $a The University of North Carolina at Chapel Hill. $3 1017449
773 0 $t Dissertation Abstracts International $g 64-08B.
790 1 0 $a Irene, Eugene A., $e advisor
790 $a 0153
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3100266