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Hafnium dioxide based gate dielectri...

Chen, Fang.

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Hafnium dioxide based gate dielectrics for nanoscale MOSFETs .

Record Type:	Electronic resources : Monograph/item
Title/Author:	Hafnium dioxide based gate dielectrics for nanoscale MOSFETs ./
Author:	Chen, Fang.
Description:	159 p.
Notes:	Source: Dissertation Abstracts International, Volume: 65-01, Section: B, page: 0351.
Contained By:	Dissertation Abstracts International65-01B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3120489

Hafnium dioxide based gate dielectrics for nanoscale MOSFETs .
Chen, Fang.

Hafnium dioxide based gate dielectrics for nanoscale MOSFETs . - 159 p.

Source: Dissertation Abstracts International, Volume: 65-01, Section: B, page: 0351.

Thesis (Ph.D.)--University of Minnesota, 2004.

Metal-oxide-semiconductor field-effect transistors (MOSFETs) have been continually scaled to achieve improved performance. This scaling trend is rapidly approaching physical limits of traditional materials. In order to push the physical limits, Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Hafnium dioxide based gate dielectrics for nanoscale MOSFETs .
LDR:01602nmm 2200277 4500 001 1862708
005 20041119083413.5
008 130614s2004 eng d
035 $a (UnM)AAI3120489
035 $a AAI3120489
040 $a UnM $c UnM
100 1 $a Chen, Fang. $3 1086125
245 1 0 $a Hafnium dioxide based gate dielectrics for nanoscale MOSFETs .
300 $a 159 p.
500 $a Source: Dissertation Abstracts International, Volume: 65-01, Section: B, page: 0351.
500 $a Adviser: Stephen A. Campbell.
502 $a Thesis (Ph.D.)--University of Minnesota, 2004.
520 $a Metal-oxide-semiconductor field-effect transistors (MOSFETs) have been continually scaled to achieve improved performance. This scaling trend is rapidly approaching physical limits of traditional materials. In order to push the physical limits,
520 $a HfO2 film has been reported with a dielectric constant of about 20. An important property of HfO2 is its thermal stability on silicon substrate up to a temperature of 1000°C. In my work ultra-thin HfO2 films have been prepared in a LPCVD sys
520 $a Exploratory study has been carried out on HTO films through combining the extremely high permittivity of TiO2 and thermal stability on Si of HfO2. Thin HTO films have shown a variable permittivity while varying component concentrations, and high
590 $a School code: 0130.
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0544
710 2 0 $a University of Minnesota. $3 676231
773 0 $t Dissertation Abstracts International $g 65-01B.
790 1 0 $a Campbell, Stephen A., $e advisor
790 $a 0130
791 $a Ph.D.
792 $a 2004
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3120489