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Surface acoustic waves and acousto-o...
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Bu, Gang.
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Surface acoustic waves and acousto-optical effects in aluminum gallium nitrides.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Surface acoustic waves and acousto-optical effects in aluminum gallium nitrides./
作者:
Bu, Gang.
面頁冊數:
122 p.
附註:
Source: Dissertation Abstracts International, Volume: 65-07, Section: B, page: 3495.
Contained By:
Dissertation Abstracts International65-07B.
標題:
Physics, Acoustics. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3140936
ISBN:
0496880756
Surface acoustic waves and acousto-optical effects in aluminum gallium nitrides.
Bu, Gang.
Surface acoustic waves and acousto-optical effects in aluminum gallium nitrides.
- 122 p.
Source: Dissertation Abstracts International, Volume: 65-07, Section: B, page: 3495.
Thesis (Ph.D.)--Rensselaer Polytechnic Institute, 2004.
Aluminum nitride, gallium nitride, and their alloys possess piezoelectric properties, which make them potential materials for surface acoustic wave (SAW) applications. The propagation of the Rayleigh-type and leaky surface acoustic waves (LSAW) has been studied in bulk and layered nitrides theoretically and experimentally. Low temperature coefficient of frequency (TCF) of -16 ppm/°C (for Rayleigh wave), high velocity (∼11000 m/s for second leaky) and reasonably large K2 (∼0.5%) have been obtained for the a-plane c -propagation AlN single-crystal substrates. A full set of elastic and piezoelectric constants of AlN has also been extracted by measuring the SAW and LSAW velocities and K2 values in c-plane and a-plane samples in various directions. With an AIN layer deposited on Z-cut LiNbO3, the phase velocity increased slightly (∼1%), TCF was improved by 15%, but the K2 value decreased by about 50% at kh = 0.1, compared to LiNbO3 substrate.
ISBN: 0496880756Subjects--Topical Terms:
1019086
Physics, Acoustics.
Surface acoustic waves and acousto-optical effects in aluminum gallium nitrides.
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Aluminum nitride, gallium nitride, and their alloys possess piezoelectric properties, which make them potential materials for surface acoustic wave (SAW) applications. The propagation of the Rayleigh-type and leaky surface acoustic waves (LSAW) has been studied in bulk and layered nitrides theoretically and experimentally. Low temperature coefficient of frequency (TCF) of -16 ppm/°C (for Rayleigh wave), high velocity (∼11000 m/s for second leaky) and reasonably large K2 (∼0.5%) have been obtained for the a-plane c -propagation AlN single-crystal substrates. A full set of elastic and piezoelectric constants of AlN has also been extracted by measuring the SAW and LSAW velocities and K2 values in c-plane and a-plane samples in various directions. With an AIN layer deposited on Z-cut LiNbO3, the phase velocity increased slightly (∼1%), TCF was improved by 15%, but the K2 value decreased by about 50% at kh = 0.1, compared to LiNbO3 substrate.
520
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Using the prism coupling method at optical wavelength 633 nm, we measured the effective refractive indices of guided optical modes in AlxGa 1-xN-on-sapphire structure. From these measurements, the ordinary and extraordinary refractive indices and thicknesses of the layers were evaluated. By fitting our experimental values to the data published in literature, we determined the energy bandgaps and molar fractions of Al in our samples. Also a straightforward method was realized to characterize the attenuation of guided modes by employing a CCD system.
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One of the promising applications of the SAW in nitrides is the acousto-optical (AO) control of guided optical waves, which provides a potential of the integration of the light source, controlling electronics and the SAW device on the same chip. The acousto-optic diffraction of guided optical waves from the SAWS in AlxGa1-xN-on-sapphire structure was studied. In the near-to-Bragg diffraction regime, the diffraction efficiency from 90 to 95% was attained at SAW powers of 0.28 W and 0.72 W for the blue and red light respectively. The increase in the diffraction efficiency with the decreasing optical wavelength is in a good agreement with the theoretical prediction. This feature makes AlGaN very promising for AO applications in the deep UV region.
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