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Tunable porous silicon photonic band...

Weiss, Sharon M.

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Tunable porous silicon photonic bandgap structures: Mirrors for optical interconnects and optical switching.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Tunable porous silicon photonic bandgap structures: Mirrors for optical interconnects and optical switching./
Author:	Weiss, Sharon M.
Description:	124 p.
Notes:	Source: Dissertation Abstracts International, Volume: 66-03, Section: B, page: 1534.
Contained By:	Dissertation Abstracts International66-03B.
Subject:	Physics, Optics. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3169599
ISBN:	0542056496

Tunable porous silicon photonic bandgap structures: Mirrors for optical interconnects and optical switching.
Weiss, Sharon M.

Tunable porous silicon photonic bandgap structures: Mirrors for optical interconnects and optical switching. - 124 p.

Source: Dissertation Abstracts International, Volume: 66-03, Section: B, page: 1534.

Thesis (Ph.D.)--University of Rochester, 2005.

Silicon is the dominant material in the microelectronics industry but it does not play a major role in optoelectronics because its optical properties are not sensitive to electric fields. In order to transfer the advantages of the well-established silicon processing infrastructure to the optoelectronics domain, the materials and optical properties of silicon must be manipulated. Porous silicon is a unique material that can provide the link between silicon technology and optoelectronic devices because it is inherently silicon-based, which facilitates device integration into a standard microelectronics platform, and it is porous, which allows for tuning of its optical properties. Through an effective medium approximation, a wide range of refractive indices can be achieved by varying the percentage of void space in porous silicon.{09}Moreover, optically active species can be infiltrated into the silicon matrix to enable dynamic tuning of the porous silicon refractive index. In this work, tunable porous silicon photonic bandgap filters are fabricated as a first step towards silicon-based optical components. The basic structures for the tunable filters are multilayer porous silicon microcavities infiltrated with liquid crystals. The reflectance of the devices is tuned based on a physical rotation and subsequent refractive index change of the liquid crystals in response to thermal or electric field modulation. Extinction ratios exceeding 10 dB have been demonstrated. To better regulate the active tuning, a general method to minimize thermally induced drifts of silicon-based photonic bandgap structures is developed based on a simple oxidation treatment. Oxide coverage of the silicon matrix introduces a stress that provides a counterforce to the effect of the temperature dependent silicon refractive index in the typical operating temperature range of computer processors, 25°C to 85°C. The formation of tunable porous silicon photonic bandgap devices opens the door for the next generation of optical interconnect and optical switching technology.

ISBN: 0542056496Subjects--Topical Terms:

1018756
Physics, Optics.

Tunable porous silicon photonic bandgap structures: Mirrors for optical interconnects and optical switching.
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100 1 $a Weiss, Sharon M. $3 1669725
245 1 0 $a Tunable porous silicon photonic bandgap structures: Mirrors for optical interconnects and optical switching.
300 $a 124 p.
500 $a Source: Dissertation Abstracts International, Volume: 66-03, Section: B, page: 1534.
500 $a Supervisor: Philippe M. Fauchet.
502 $a Thesis (Ph.D.)--University of Rochester, 2005.
520 $a Silicon is the dominant material in the microelectronics industry but it does not play a major role in optoelectronics because its optical properties are not sensitive to electric fields. In order to transfer the advantages of the well-established silicon processing infrastructure to the optoelectronics domain, the materials and optical properties of silicon must be manipulated. Porous silicon is a unique material that can provide the link between silicon technology and optoelectronic devices because it is inherently silicon-based, which facilitates device integration into a standard microelectronics platform, and it is porous, which allows for tuning of its optical properties. Through an effective medium approximation, a wide range of refractive indices can be achieved by varying the percentage of void space in porous silicon.{09}Moreover, optically active species can be infiltrated into the silicon matrix to enable dynamic tuning of the porous silicon refractive index. In this work, tunable porous silicon photonic bandgap filters are fabricated as a first step towards silicon-based optical components. The basic structures for the tunable filters are multilayer porous silicon microcavities infiltrated with liquid crystals. The reflectance of the devices is tuned based on a physical rotation and subsequent refractive index change of the liquid crystals in response to thermal or electric field modulation. Extinction ratios exceeding 10 dB have been demonstrated. To better regulate the active tuning, a general method to minimize thermally induced drifts of silicon-based photonic bandgap structures is developed based on a simple oxidation treatment. Oxide coverage of the silicon matrix introduces a stress that provides a counterforce to the effect of the temperature dependent silicon refractive index in the typical operating temperature range of computer processors, 25°C to 85°C. The formation of tunable porous silicon photonic bandgap devices opens the door for the next generation of optical interconnect and optical switching technology.
590 $a School code: 0188.
650 4 $a Physics, Optics. $3 1018756
650 4 $a Engineering, Materials Science. $3 1017759
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773 0 $t Dissertation Abstracts International $g 66-03B.
790 1 0 $a Fauchet, Philippe M., $e advisor
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791 $a Ph.D.
792 $a 2005
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