東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Arsenic-doping of silicon by molecul...

Liu, Xian.

Linked to FindBook

Google Book

Amazon

博客來

Arsenic-doping of silicon by molecular beam epitaxy.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Arsenic-doping of silicon by molecular beam epitaxy./
Author:	Liu, Xian.
Description:	90 p.
Notes:	Source: Dissertation Abstracts International, Volume: 64-05, Section: B, page: 2347.
Contained By:	Dissertation Abstracts International64-05B.
Subject:	Engineering, Materials Science. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3090638
ISBN:	0496383604

Arsenic-doping of silicon by molecular beam epitaxy.
Liu, Xian.

Arsenic-doping of silicon by molecular beam epitaxy. - 90 p.

Source: Dissertation Abstracts International, Volume: 64-05, Section: B, page: 2347.

Thesis (Ph.D.)--Stanford University, 2003.

As MOSFETs scale to the deep-submicron regime, the need for ultra-shallow junctions and modulation-doping structures has brought an increasing demand for silicon epitaxial layers with abrupt doping profiles. For these devices, arsenic is an attractive N-type dopant because of its high solubility and low diffusion rate, but suffers from severe surface segregation during epitaxy, making high-concentration incorporation with abrupt transitions difficult.

ISBN: 0496383604Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Arsenic-doping of silicon by molecular beam epitaxy.
LDR:03049nmm 2200289 4500 001 1843780
005 20051017073359.5
008 130614s2003 eng d
020 $a 0496383604
035 $a (UnM)AAI3090638
035 $a AAI3090638
040 $a UnM $c UnM
100 1 $a Liu, Xian. $3 1931998
245 1 0 $a Arsenic-doping of silicon by molecular beam epitaxy.
300 $a 90 p.
500 $a Source: Dissertation Abstracts International, Volume: 64-05, Section: B, page: 2347.
500 $a Adviser: James S. Harris, Jr.
502 $a Thesis (Ph.D.)--Stanford University, 2003.
520 $a As MOSFETs scale to the deep-submicron regime, the need for ultra-shallow junctions and modulation-doping structures has brought an increasing demand for silicon epitaxial layers with abrupt doping profiles. For these devices, arsenic is an attractive N-type dopant because of its high solubility and low diffusion rate, but suffers from severe surface segregation during epitaxy, making high-concentration incorporation with abrupt transitions difficult.
520 $a This dissertation describes arsenic surface segregation and incorporation during Si molecular beam epitaxy (MBE) using a unique combination of solid and gas sources. Using disilane gas for silicon and dimer molecules for arsenic sources, it is shown that relatively high substrate temperatures are needed to activate surface reactions during growth. Surface segregation of arsenic under these conditions is investigated and a new segregation energy model is proposed based on surface 2-D islanding of arsenic. Arsenic incorporation in SiGe at these high temperatures is much improved compared to that in silicon, which is attributed to competitive surface segregation. Replacing disilane with an elemental silicon source, on the other hand, eliminates surface reaction steps and enables deposition at lower temperatures, where surface segregation becomes kinetically suppressed. Under these conditions extremely high arsenic concentrations can be achieved. In this work, we demonstrated Si (100) epilayers with As concentrations up to 4 x 1021 cm-3 and doping transitions better than 3 nm/decade. Other mechanisms that can limit arsenic incorporation in Si and SiGe in this regime are discussed. Electrical properties of heavily doped as-grown and annealed materials are investigated and correlated to atomic-scale defects. While electrical properties in thicker epilayers are limited by bulk values, confining dopants to a thin sheet a few nanometers thick leads to significant improvements in both dopant activation and carrier mobility. The former is correlated to geometric suppression of arsenic clustering and the latter to quantum confinement. Effects of layer thickness and spacing are also discussed.
590 $a School code: 0212.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0794
690 $a 0544
710 2 0 $a Stanford University. $3 754827
773 0 $t Dissertation Abstracts International $g 64-05B.
790 1 0 $a Harris, James S., Jr., $e advisor
790 $a 0212
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3090638