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Chemical vapor deposition and charac...

Mays, Ebony Lynn.

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Chemical vapor deposition and characterization of zirconium tin titanate as a high dielectric constant material for potential electronic applications.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Chemical vapor deposition and characterization of zirconium tin titanate as a high dielectric constant material for potential electronic applications./
Author:	Mays, Ebony Lynn.
Description:	191 p.
Notes:	Source: Dissertation Abstracts International, Volume: 64-10, Section: B, page: 5162.
Contained By:	Dissertation Abstracts International64-10B.
Subject:	Engineering, Materials Science. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3110436
ISBN:	0496579740

Chemical vapor deposition and characterization of zirconium tin titanate as a high dielectric constant material for potential electronic applications.
Mays, Ebony Lynn.

Chemical vapor deposition and characterization of zirconium tin titanate as a high dielectric constant material for potential electronic applications. - 191 p.

Source: Dissertation Abstracts International, Volume: 64-10, Section: B, page: 5162.

Thesis (Ph.D.)--Georgia Institute of Technology, 2003.

Integrated circuit (IC) manufacturers increasingly need new high dielectric constant (epsilon) materials for gate stacks to maintain the pace of developing faster, higher capacity CMOS and DRAM devices. Identification of new high-epsilon materia

ISBN: 0496579740Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Chemical vapor deposition and characterization of zirconium tin titanate as a high dielectric constant material for potential electronic applications.
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100 1 $a Mays, Ebony Lynn. $3 1930267
245 1 0 $a Chemical vapor deposition and characterization of zirconium tin titanate as a high dielectric constant material for potential electronic applications.
300 $a 191 p.
500 $a Source: Dissertation Abstracts International, Volume: 64-10, Section: B, page: 5162.
500 $a Directors: William S. Rees, Jr.; Dennis W. Hess.
502 $a Thesis (Ph.D.)--Georgia Institute of Technology, 2003.
520 $a Integrated circuit (IC) manufacturers increasingly need new high dielectric constant (epsilon) materials for gate stacks to maintain the pace of developing faster, higher capacity CMOS and DRAM devices. Identification of new high-epsilon materia
520 $a The following discussion details the construction and modification of a CVD reactor for the deposition of ZTT thin films. In addition, characterization of a precursor "cocktail"---a solution containing all the metal components of the film---for
590 $a School code: 0078.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Engineering, Chemical. $3 1018531
650 4 $a Chemistry, Analytical. $3 586156
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710 2 0 $a Georgia Institute of Technology. $3 696730
773 0 $t Dissertation Abstracts International $g 64-10B.
790 1 0 $a Rees, William S., Jr., $e advisor
790 1 0 $a Hess, Dennis W., $e advisor
790 $a 0078
791 $a Ph.D.
792 $a 2003
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