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Three-dimensional single crystal sil...

Hofmann, Wolfgang Maximilian Josef.

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Three-dimensional single crystal silicon micromachining.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Three-dimensional single crystal silicon micromachining./
作者:	Hofmann, Wolfgang Maximilian Josef.
面頁冊數:	247 p.
附註:	Source: Dissertation Abstracts International, Volume: 60-08, Section: B, page: 4125.
Contained By:	Dissertation Abstracts International60-08B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9939961
ISBN:	0599413638

Three-dimensional single crystal silicon micromachining.
Hofmann, Wolfgang Maximilian Josef.

Three-dimensional single crystal silicon micromachining. - 247 p.

Source: Dissertation Abstracts International, Volume: 60-08, Section: B, page: 4125.

Thesis (Ph.D.)--Cornell University, 1999.

A monolithic, multiple-level (ML), single-crystal-silicon (SCS) micromachining process called SCREAM3D has been developed. The high-aspect-ratio (HAR) levels are self-aligned and are fabricated from a single substrate by deep etching. Anisotropic reactive ion etching of silicon has been studied in detail and new recipes for the vertical etch and release of HAR ML structures have been developed.

ISBN: 0599413638Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Three-dimensional single crystal silicon micromachining.
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100 1 $a Hofmann, Wolfgang Maximilian Josef. $3 1929600
245 1 0 $a Three-dimensional single crystal silicon micromachining.
300 $a 247 p.
500 $a Source: Dissertation Abstracts International, Volume: 60-08, Section: B, page: 4125.
500 $a Chair: Noel C. MacDonald.
502 $a Thesis (Ph.D.)--Cornell University, 1999.
520 $a A monolithic, multiple-level (ML), single-crystal-silicon (SCS) micromachining process called SCREAM3D has been developed. The high-aspect-ratio (HAR) levels are self-aligned and are fabricated from a single substrate by deep etching. Anisotropic reactive ion etching of silicon has been studied in detail and new recipes for the vertical etch and release of HAR ML structures have been developed.
520 $a The SCREAM3D levels are electrically isolated from the substrate and one another using a novel ML isolation scheme, which requires only a single lithography and metallization step, regardless of the number of levels. Two- and three-level SCREAM3D devices have been fabricated. They demonstrate three device concepts: ML microelectromechanical systems (MEMS), micromachined electron gun arrays (MEGA) and ML actuators for out-of-plane deflection.
520 $a ML MEMS consist of several suspended levels moving relative to each other. They can be coupled mechanically and/or electrically. One example is a novel clamp-alignment device which uses the relative translation of two initially self-aligned apertures to grip and align an external component (such as an optical fiber) to the wafer.
520 $a MEGA is a multiple-beam architecture to increase the throughput of electron beam lithography. MEGA is an array of identical electron sources, consisting of silicon field emitters with integrated electrostatic lenses. The parallel operation of a large number (N = 10,000) of sources is required to increase the total current and throughput (60 8"-wafers/hour) of the system while maintaining standard single-beam parameters (10nA, 20MHz exposure rate) and limiting charge-interaction effects. ML actuators have been studied by numerical simulation. All four designs outperform comparable single-level actuators: the generated force is up to five times larger, and the range of motion up to ten times greater. Two of the ML designs operate bi-directionally and one design can be used to form a bi-stable system. Several of the actuators have been integrated with torsional and z-motion-stages and experimentally characterized using laser vibrometry.
520 $a SCREAM3D extends SCS bulk-micromachining to multiple-level structures. The self-aligned, high-aspect-ratio levels allow the implementation of more efficient device designs and novel ML device concepts. Complex actuators, generating larger forces in reduced chip area, can be fabricated and entire microinstruments can be integrated on a single wafer.
590 $a School code: 0058.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Applied Mechanics. $3 1018410
650 4 $a Engineering, Materials Science. $3 1017759
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710 2 0 $a Cornell University. $3 530586
773 0 $t Dissertation Abstracts International $g 60-08B.
790 1 0 $a MacDonald, Noel C., $e advisor
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791 $a Ph.D.
792 $a 1999
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