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Thermal and electrical studies of ga...

Park, Jeong.

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Thermal and electrical studies of gallium nitride-based heterojunction field effect transistors and light emitting diodes.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Thermal and electrical studies of gallium nitride-based heterojunction field effect transistors and light emitting diodes./
Author:	Park, Jeong.
Description:	101 p.
Notes:	Source: Dissertation Abstracts International, Volume: 65-10, Section: B, page: 5316.
Contained By:	Dissertation Abstracts International65-10B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3149682
ISBN:	0496090089

Thermal and electrical studies of gallium nitride-based heterojunction field effect transistors and light emitting diodes.
Park, Jeong.

Thermal and electrical studies of gallium nitride-based heterojunction field effect transistors and light emitting diodes. - 101 p.

Source: Dissertation Abstracts International, Volume: 65-10, Section: B, page: 5316.

Thesis (Ph.D.)--University of California, Irvine, 2004.

Thermal modeling and measurements of AlGaN/GaN heterojuction field effect transistors (HFETs) built on sapphire and SiC substrates, and InGaN/GaN multi-quantum well (MQW) structure light emitting diodes (LEDs) on sapphire are studied. In thermal modeling, PAMICE and UNITHERM code are used to calculate temperatures in a 3-D model. In thermal measurement, nematic liquid crystal thermography (NLCT) is employed to determine the junction temperature of HFETs device built on sapphire and SiC substrates. Temperature measurements give the actual junction temperature Tj while the thermal modeling confirms the measurement results. The temperature of the active region is the junction temperature and it is the junction temperature that directly affects the device performance parameters. Therefore, Tj is an important parameter for studying and understanding the GaN-based semiconductor devices characteristics.

ISBN: 0496090089Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Thermal and electrical studies of gallium nitride-based heterojunction field effect transistors and light emitting diodes.
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100 1 $a Park, Jeong. $3 1928040
245 1 0 $a Thermal and electrical studies of gallium nitride-based heterojunction field effect transistors and light emitting diodes.
300 $a 101 p.
500 $a Source: Dissertation Abstracts International, Volume: 65-10, Section: B, page: 5316.
500 $a Chair: Chin C. Lee.
502 $a Thesis (Ph.D.)--University of California, Irvine, 2004.
520 $a Thermal modeling and measurements of AlGaN/GaN heterojuction field effect transistors (HFETs) built on sapphire and SiC substrates, and InGaN/GaN multi-quantum well (MQW) structure light emitting diodes (LEDs) on sapphire are studied. In thermal modeling, PAMICE and UNITHERM code are used to calculate temperatures in a 3-D model. In thermal measurement, nematic liquid crystal thermography (NLCT) is employed to determine the junction temperature of HFETs device built on sapphire and SiC substrates. Temperature measurements give the actual junction temperature Tj while the thermal modeling confirms the measurement results. The temperature of the active region is the junction temperature and it is the junction temperature that directly affects the device performance parameters. Therefore, Tj is an important parameter for studying and understanding the GaN-based semiconductor devices characteristics.
520 $a A new nematic liquid crystal thermography configuration with a color filter using infrared (IR) laser illumination source has been developed to measure the junction temperature Tj of light emitting devices. The junction temperature Tj of InGaN/GaN multi quantum well (MQW) light emitting diodes (LEDs) are measured with a new nematic liquid crystal thermography method. The new configuration is clearly different from conventional nematic liquid crystal thermography method.
520 $a With junction temperature Tj information available, the physical model of the light emitting diodes (LEDs) with the current spreading layer is studied. The physical model can be a useful tool for optimizing the conversion efficiency of the LEDs with the current spreading layer. For LEDs with the quantum-well (QW) structure, the use of the ideal diode equation is fundamentally incorrect. A new diode model is studied for LEDs with QW structure. Temperature measurements and a device model of the LEDs further enables one to predict and assess possible performance improvement during the modification of device structures and packages. Temperature measurement and a device model are valuable for improving LEDs device structures, packages, and helps the physical understanding of the device.
590 $a School code: 0030.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Physics, Optics. $3 1018756
690 $a 0544
690 $a 0752
710 2 0 $a University of California, Irvine. $3 705821
773 0 $t Dissertation Abstracts International $g 65-10B.
790 1 0 $a Lee, Chin C., $e advisor
790 $a 0030
791 $a Ph.D.
792 $a 2004
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3149682